Low-cost 38 and 77 GHz CPW MMICs using ion-implanted GaAs MESFETs

D. C. Caruth, R. L. Shimon, M. S. Heins, H. Hsia, Z. Tang, S. C. Shen, D. Becher, J. J. Huang, M. Feng

Research output: Contribution to journalConference articlepeer-review


Oscillators, amplifiers, and frequency doublers at 38 and 77 GHz have been fabricated using direct ion-implanted GaAs MESFETs and CPW. The 38-GHz VCO delivers 12 dBm of power and the 77-GHz amplifier has 7.5 dB of gain. The various circuit results demonstrate that the direct ion-implanted GaAs MESFET process is a low-cost alternative to more expensive expitaxial device technologies for a wide variety of existing and emerging millimeter-wave circuit applications.

Original languageEnglish (US)
Pages (from-to)995-998
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
StatePublished - 2000
EventProceedings of the 1999 IEEE MTT-S International Microwave Symposium - Boson, MA, USA
Duration: Jun 11 2000Jun 16 2000

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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