Low-cost 38 and 77 GHz CPW MMICs using ion-implanted GaAs MESFETs

D. C. Caruth; R. L. Shimon; M. S. Heins; H. Hsia; Z. Tang; S. C. Shen; D. Becher; J. J. Huang; M. Feng

Low-cost 38 and 77 GHz CPW MMICs using ion-implanted GaAs MESFETs

D. C. Caruth, R. L. Shimon, M. S. Heins, H. Hsia, Z. Tang, S. C. Shen, D. Becher, J. J. Huang, M. Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Oscillators, amplifiers, and frequency doublers at 38 and 77 GHz have been fabricated using direct ion-implanted GaAs MESFETs and CPW. The 38-GHz VCO delivers 12 dBm of power and the 77-GHz amplifier has 7.5 dB of gain. The various circuit results demonstrate that the direct ion-implanted GaAs MESFET process is a low-cost alternative to more expensive expitaxial device technologies for a wide variety of existing and emerging millimeter-wave circuit applications.

Original language	English (US)
Pages (from-to)	995-998
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
State	Published - 2000
Event	Proceedings of the 1999 IEEE MTT-S International Microwave Symposium - Boson, MA, USA Duration: Jun 11 2000 → Jun 16 2000

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Low-cost 38 and 77 GHz CPW MMICs using ion-implanted GaAs MESFETs",

abstract = "Oscillators, amplifiers, and frequency doublers at 38 and 77 GHz have been fabricated using direct ion-implanted GaAs MESFETs and CPW. The 38-GHz VCO delivers 12 dBm of power and the 77-GHz amplifier has 7.5 dB of gain. The various circuit results demonstrate that the direct ion-implanted GaAs MESFET process is a low-cost alternative to more expensive expitaxial device technologies for a wide variety of existing and emerging millimeter-wave circuit applications.",

author = "Caruth, {D. C.} and Shimon, {R. L.} and Heins, {M. S.} and H. Hsia and Z. Tang and Shen, {S. C.} and D. Becher and Huang, {J. J.} and M. Feng",

year = "2000",

language = "English (US)",

volume = "2",

pages = "995--998",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 IEEE MTT-S International Microwave Symposium ; Conference date: 11-06-2000 Through 16-06-2000",

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TY - JOUR

T1 - Low-cost 38 and 77 GHz CPW MMICs using ion-implanted GaAs MESFETs

AU - Caruth, D. C.

AU - Shimon, R. L.

AU - Heins, M. S.

AU - Hsia, H.

AU - Tang, Z.

AU - Shen, S. C.

AU - Becher, D.

AU - Huang, J. J.

AU - Feng, M.

PY - 2000

Y1 - 2000

N2 - Oscillators, amplifiers, and frequency doublers at 38 and 77 GHz have been fabricated using direct ion-implanted GaAs MESFETs and CPW. The 38-GHz VCO delivers 12 dBm of power and the 77-GHz amplifier has 7.5 dB of gain. The various circuit results demonstrate that the direct ion-implanted GaAs MESFET process is a low-cost alternative to more expensive expitaxial device technologies for a wide variety of existing and emerging millimeter-wave circuit applications.

AB - Oscillators, amplifiers, and frequency doublers at 38 and 77 GHz have been fabricated using direct ion-implanted GaAs MESFETs and CPW. The 38-GHz VCO delivers 12 dBm of power and the 77-GHz amplifier has 7.5 dB of gain. The various circuit results demonstrate that the direct ion-implanted GaAs MESFET process is a low-cost alternative to more expensive expitaxial device technologies for a wide variety of existing and emerging millimeter-wave circuit applications.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033694454&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033694454

SN - 0149-645X

VL - 2

SP - 995

EP - 998

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - Proceedings of the 1999 IEEE MTT-S International Microwave Symposium

Y2 - 11 June 2000 through 16 June 2000

ER -

Low-cost 38 and 77 GHz CPW MMICs using ion-implanted GaAs MESFETs

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