Abstract
A novel low-voltage radio-frequency microelectromechanical system (RF MEMS) switch is reported. The device switching voltages are 14-17 volts. When the device is operated in an 'on' state, an insertion loss of less than 0.5 dB with a return loss of -15 dB at 40GHz was measured. When operated in its 'off' state, an isolation of better than 27 dB over the frequency band from 0.25GHz to 40GHz was achieved. The RF MEMS switch equivalent circuit model shows that the 'on' resistance is 0.3 Ω and the 'off' capacitance is 90fF, which results in a figure of merit of 6000GHz.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 689-692 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - 1999 |
| Event | 1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: Dec 5 1999 → Dec 8 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering