Losses in single-mode silicon-on-insulator strip waveguides and bends

Yurii A. Vlasov, Sharee J. McNab

Research output: Contribution to journalArticlepeer-review

Abstract

We report the fabrication and accurate measurement of propagation and bending losses in single-mode silicon waveguides with submicron dimensions fabricated on silicon-on-insulator wafers. Owing to the small sidewall surface roughness achieved by processing on a standard 200mm CMOS fabrication line, minimal propagation losses of 3.6±0.1dB/cm for the TE polarization were measured at the telecommunications wavelength of 1.5μm. Losses per 90° bend are measured to be 0.086±0.005dB for a bending radius of 1μm and as low as 0.013±0.005dB for a bend radius of 2μm. These record low numbers can be used as a benchmark for further development of silicon microphotonic components and circuits.

Original languageEnglish (US)
Pages (from-to)1622-1631
Number of pages10
JournalOptics Express
Volume12
Issue number8
DOIs
StatePublished - Apr 2004
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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