Long wavelength shifting and broadening of quantum well infrared photodetector response via rapid thermal annealing

D. K. Sengupta, W. Fang, J. I. Malin, H. C. Kuo, T. Horton, A. Curtis, N. F. Gardner, B. Flachsbart, W. Wohlmuth, D. Turnbull, S. L. Chuang, K. C. Hsieh, K. Y. Cheng, I. Adesida, M. Feng, al et al

Research output: Contribution to journalConference articlepeer-review

Abstract

A shift in the peak response wavelength and a broadening of the photoresponse spectrum is demonstrated for intersubband absorption in n-doped GaAs/AlGaAs multiple quantum well detectors following intermixing of the well and barrier layers during rapid thermal annealing. In general, a decrease in performance is observed for the RTA QWIPs when compared to the as-grown detectors. The peak absolute response of the annealed QWIPs is lower by almost a factor of four, which results in corresponding decrease in quantum efficiency. In addition, the noise performance results in a detectivity which is five times lower than that of QWIPs fabricated from as-grown structures.

Original languageEnglish (US)
Pages (from-to)355-360
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume421
DOIs
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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