Abstract
A shift in the peak response wavelength and a broadening of the photoresponse spectrum is demonstrated for intersubband absorption in n-doped GaAs/AlGaAs multiple quantum well detectors following intermixing of the well and barrier layers during rapid thermal annealing. In general, a decrease in performance is observed for the RTA QWIPs when compared to the as-grown detectors. The peak absolute response of the annealed QWIPs is lower by almost a factor of four, which results in corresponding decrease in quantum efficiency. In addition, the noise performance results in a detectivity which is five times lower than that of QWIPs fabricated from as-grown structures.
Original language | English (US) |
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Pages (from-to) | 355-360 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 421 |
DOIs | |
State | Published - 1996 |
Event | Proceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering