Long-wavelength metamorphic InGaAs detectors on GaAs substrates

I. Adesida, J. H. Jang, J. W. Bae, S. Kim, W. E. Hoke

Research output: Contribution to journalConference articlepeer-review


The properties of metamorphic materials, fabrication process of photodiodes, and device results on long-wavelength InGaAs photodetectors with low leakage current and large bandwidth are presented. The metamorphic device layers are grown on GaAs substrates using a linearly-graded buffer layer to expand the lattice constant. The indium content in the layer is gradually increased and that of galllium is gradually decreased form the GaAs substrate to In0.52Al0.48As which is lattice-matched to InP.

Original languageEnglish (US)
Pages (from-to)919-920
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
StatePublished - Dec 9 2003
Event2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States
Duration: Oct 26 2003Oct 30 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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