Long-wavelength metamorphic InGaAs detectors on GaAs substrates

I. Adesida; J. H. Jang; J. W. Bae; S. Kim; W. E. Hoke

Long-wavelength metamorphic InGaAs detectors on GaAs substrates

I. Adesida, J. H. Jang, J. W. Bae, S. Kim, W. E. Hoke

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Abstract

The properties of metamorphic materials, fabrication process of photodiodes, and device results on long-wavelength InGaAs photodetectors with low leakage current and large bandwidth are presented. The metamorphic device layers are grown on GaAs substrates using a linearly-graded buffer layer to expand the lattice constant. The indium content in the layer is gradually increased and that of galllium is gradually decreased form the GaAs substrate to In_0.52Al_0.48As which is lattice-matched to InP.

Original language	English (US)
Pages (from-to)	919-920
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
State	Published - Dec 9 2003
Event	2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States Duration: Oct 26 2003 → Oct 30 2003

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Long-wavelength metamorphic InGaAs detectors on GaAs substrates",

abstract = "The properties of metamorphic materials, fabrication process of photodiodes, and device results on long-wavelength InGaAs photodetectors with low leakage current and large bandwidth are presented. The metamorphic device layers are grown on GaAs substrates using a linearly-graded buffer layer to expand the lattice constant. The indium content in the layer is gradually increased and that of galllium is gradually decreased form the GaAs substrate to In0.52Al0.48As which is lattice-matched to InP.",

author = "I. Adesida and Jang, {J. H.} and Bae, {J. W.} and S. Kim and Hoke, {W. E.}",

year = "2003",

month = dec,

day = "9",

language = "English (US)",

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pages = "919--920",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 IEEE LEOS Annual Meeting Conference Proceedings ; Conference date: 26-10-2003 Through 30-10-2003",

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T1 - Long-wavelength metamorphic InGaAs detectors on GaAs substrates

AU - Adesida, I.

AU - Jang, J. H.

AU - Bae, J. W.

AU - Kim, S.

AU - Hoke, W. E.

PY - 2003/12/9

Y1 - 2003/12/9

N2 - The properties of metamorphic materials, fabrication process of photodiodes, and device results on long-wavelength InGaAs photodetectors with low leakage current and large bandwidth are presented. The metamorphic device layers are grown on GaAs substrates using a linearly-graded buffer layer to expand the lattice constant. The indium content in the layer is gradually increased and that of galllium is gradually decreased form the GaAs substrate to In0.52Al0.48As which is lattice-matched to InP.

AB - The properties of metamorphic materials, fabrication process of photodiodes, and device results on long-wavelength InGaAs photodetectors with low leakage current and large bandwidth are presented. The metamorphic device layers are grown on GaAs substrates using a linearly-graded buffer layer to expand the lattice constant. The indium content in the layer is gradually increased and that of galllium is gradually decreased form the GaAs substrate to In0.52Al0.48As which is lattice-matched to InP.

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M3 - Conference article

AN - SCOPUS:0344465464

SN - 1092-8081

VL - 2

SP - 919

EP - 920

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 2003 IEEE LEOS Annual Meeting Conference Proceedings

Y2 - 26 October 2003 through 30 October 2003

ER -

Long-wavelength metamorphic InGaAs detectors on GaAs substrates

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