Long wavelength metamorphic double heterojunction in0.53Ga0.47As/inalgaas/ in0.52Al0.48As photodiodes on gaAs substrates

J. H. Jang; G. Cueva; D. C. Dumka; W. E. Hoke; P. J. Lemonias; P. Fay; I. Adesida

doi:10.1049/el:20010474

Long wavelength metamorphic double heterojunction in_0.53Ga_0.47As/inalgaas/ in_0.52Al_0.48As photodiodes on gaAs substrates

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, P. Fay, I. Adesida

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Abstract

The design and performance of metamorphic InGaAs/InGaAlAls/ InAlAs double heterojunction photodiodes fabricated on GaAs substrates are presented. A low dark current of 500 pA at 5 V bias, a responsivity of 0.6 A/W, and a -3 dB bandwidth of 38 GHz for 1.55μm light have been achieved by using a large bandgap drift region in conjunction with a digitally graded bandgap layer.

Original language	English (US)
Pages (from-to)	707-708
Number of pages	2
Journal	Electronics Letters
Volume	37
Issue number	11
DOIs	https://doi.org/10.1049/el:20010474
State	Published - May 24 2001

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20010474

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Cite this

@article{aef349c8e1e54a8285b6a94c0e10e2dc,

title = "Long wavelength metamorphic double heterojunction in0.53Ga0.47As/inalgaas/ in0.52Al0.48As photodiodes on gaAs substrates",

abstract = "The design and performance of metamorphic InGaAs/InGaAlAls/ InAlAs double heterojunction photodiodes fabricated on GaAs substrates are presented. A low dark current of 500 pA at 5 V bias, a responsivity of 0.6 A/W, and a -3 dB bandwidth of 38 GHz for 1.55μm light have been achieved by using a large bandgap drift region in conjunction with a digitally graded bandgap layer.",

author = "Jang, {J. H.} and G. Cueva and Dumka, {D. C.} and Hoke, {W. E.} and Lemonias, {P. J.} and P. Fay and I. Adesida",

year = "2001",

month = may,

day = "24",

doi = "10.1049/el:20010474",

language = "English (US)",

volume = "37",

pages = "707--708",

journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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T1 - Long wavelength metamorphic double heterojunction in0.53Ga0.47As/inalgaas/ in0.52Al0.48As photodiodes on gaAs substrates

AU - Jang, J. H.

AU - Cueva, G.

AU - Dumka, D. C.

AU - Hoke, W. E.

AU - Lemonias, P. J.

AU - Fay, P.

AU - Adesida, I.

PY - 2001/5/24

Y1 - 2001/5/24

N2 - The design and performance of metamorphic InGaAs/InGaAlAls/ InAlAs double heterojunction photodiodes fabricated on GaAs substrates are presented. A low dark current of 500 pA at 5 V bias, a responsivity of 0.6 A/W, and a -3 dB bandwidth of 38 GHz for 1.55μm light have been achieved by using a large bandgap drift region in conjunction with a digitally graded bandgap layer.

AB - The design and performance of metamorphic InGaAs/InGaAlAls/ InAlAs double heterojunction photodiodes fabricated on GaAs substrates are presented. A low dark current of 500 pA at 5 V bias, a responsivity of 0.6 A/W, and a -3 dB bandwidth of 38 GHz for 1.55μm light have been achieved by using a large bandgap drift region in conjunction with a digitally graded bandgap layer.

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JF - Electronics Letters

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