Abstract
In summary, the application of high transparency ITO to long-wavelength InAlAs/InGaAs MSMs have been discussed. The transparency of ITO has been shown to be as high as 99% at a wavelength of 1.3 μm when hydrogen is included in the Ar sputter gas mixture. This high transparency is in comparison with the 70% obtained without the inclusion of hydrogen. The transparency of 99% reported here for ITO at a wavelength of 1.3 μm is the highest that has been reported so far. The high transparency has resulted in MSM devices with a responsivity of 0.79 A/W which is double the responsivity of 0.39 A/W obtained for corresponding Ti/Au-MSMs. The high speed response of the high transparency ITO-MSMs was measured to be 6 GHz which is lower than the 13 GHz obtained for corresponding Ti/Au-MSMs. This is due to the higher resistivity of the high transparency ITO and the fact that carriers created under the ITO electrodes need a longer transit time before being collected.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 284-287 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| State | Published - 1994 |
| Event | Proceedings of the 6th International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA Duration: Mar 27 1994 → Mar 31 1994 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering