Long-wavelength In 0.53Ga 0.47As metamorphic p-i-n photodiodes on GaAs substrates

J. H. Jang; G. Cueva; D. C. Dumka; W. E. Hoke; P. J. Lemonias; I. Adesida

doi:10.1109/68.910518

Long-wavelength In _0.53Ga _0.47As metamorphic p-i-n photodiodes on GaAs substrates

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

Metamorphic In _0.53Ga _0.47 As p-i-n photodiodes on GaAs substrate exhibiting the lowest dark current ever reported were fabricated and characterized. Their dark current, DC and RF performances were measured and compared for devices of different sizes. Typical dark current for 15-μm-diameter devices was 600 pA under 5-V reverse bias, corresponding to a dark current density of 3.40 × 10 ^-4A/cm ². Typical responsivity measured with 1.55-μm optical radiation was 0.55 A/W, corresponding to an external quantum efficiency of 44%. The electrical 3-dB bandwidths of the photodiodes with diameters smaller than 20 μm were over 20 GHz.

Original language	English (US)
Pages (from-to)	151-153
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	13
Issue number	2
DOIs	https://doi.org/10.1109/68.910518
State	Published - Feb 2001
Externally published	Yes

Keywords

Dark current
GaAs
In Ga As
Long wavelengths
Metamorphic p-i-n photodiode
Optical communication

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/68.910518

Library availability

Discover UIUC Full Text

Cite this

@article{14e4ada6f8254c73811c253f543e3ff9,

title = "Long-wavelength In 0.53Ga 0.47As metamorphic p-i-n photodiodes on GaAs substrates",

abstract = "Metamorphic In 0.53Ga 0.47 As p-i-n photodiodes on GaAs substrate exhibiting the lowest dark current ever reported were fabricated and characterized. Their dark current, DC and RF performances were measured and compared for devices of different sizes. Typical dark current for 15-μm-diameter devices was 600 pA under 5-V reverse bias, corresponding to a dark current density of 3.40 × 10 -4A/cm 2. Typical responsivity measured with 1.55-μm optical radiation was 0.55 A/W, corresponding to an external quantum efficiency of 44%. The electrical 3-dB bandwidths of the photodiodes with diameters smaller than 20 μm were over 20 GHz.",

keywords = "Dark current, GaAs, In Ga As, Long wavelengths, Metamorphic p-i-n photodiode, Optical communication",

author = "Jang, {J. H.} and G. Cueva and Dumka, {D. C.} and Hoke, {W. E.} and Lemonias, {P. J.} and I. Adesida",

year = "2001",

month = feb,

doi = "10.1109/68.910518",

language = "English (US)",

volume = "13",

pages = "151--153",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Long-wavelength In 0.53Ga 0.47As metamorphic p-i-n photodiodes on GaAs substrates

AU - Jang, J. H.

AU - Cueva, G.

AU - Dumka, D. C.

AU - Hoke, W. E.

AU - Lemonias, P. J.

AU - Adesida, I.

PY - 2001/2

Y1 - 2001/2

N2 - Metamorphic In 0.53Ga 0.47 As p-i-n photodiodes on GaAs substrate exhibiting the lowest dark current ever reported were fabricated and characterized. Their dark current, DC and RF performances were measured and compared for devices of different sizes. Typical dark current for 15-μm-diameter devices was 600 pA under 5-V reverse bias, corresponding to a dark current density of 3.40 × 10 -4A/cm 2. Typical responsivity measured with 1.55-μm optical radiation was 0.55 A/W, corresponding to an external quantum efficiency of 44%. The electrical 3-dB bandwidths of the photodiodes with diameters smaller than 20 μm were over 20 GHz.

AB - Metamorphic In 0.53Ga 0.47 As p-i-n photodiodes on GaAs substrate exhibiting the lowest dark current ever reported were fabricated and characterized. Their dark current, DC and RF performances were measured and compared for devices of different sizes. Typical dark current for 15-μm-diameter devices was 600 pA under 5-V reverse bias, corresponding to a dark current density of 3.40 × 10 -4A/cm 2. Typical responsivity measured with 1.55-μm optical radiation was 0.55 A/W, corresponding to an external quantum efficiency of 44%. The electrical 3-dB bandwidths of the photodiodes with diameters smaller than 20 μm were over 20 GHz.

KW - Dark current

KW - GaAs

KW - In Ga As

KW - Long wavelengths

KW - Metamorphic p-i-n photodiode

KW - Optical communication

UR - http://www.scopus.com/inward/record.url?scp=0035246674&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035246674&partnerID=8YFLogxK

U2 - 10.1109/68.910518

DO - 10.1109/68.910518

M3 - Article

AN - SCOPUS:0035246674

SN - 1041-1135

VL - 13

SP - 151

EP - 153

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 2

ER -