Long-wavelength Dilute Nitride—Antimonide Lasers

J. S. Harris, M. Wistey, S. Bank, L. Goddard, V. Lordi, H. Bae, H. Yuen

Research output: Chapter in Book/Report/Conference proceedingChapter


This chapter reviews the discovery of 1.3-1.6 μm active quantum well material that can be grown on GaAs to capitalize on the superior AIAs/GaAs materials and processing technology has been a real breakthrough and has fuelled a complete re-evaluation of long wavelength lasers. It is believed that GalnNAsSb on GaAs will be the fundamental technology for wide bandwidth Metro network area (MAN)/ Local network area (LAN)/ Storage network area (SAN) optical switches, routers and high power Raman and solid-state laser pumps. The major challenge of this materials system has been to understand the differences compared to other III-V alloys systems and to produce low threshold lasers at any desired wavelength between 1.3 and 1.6 μm. The most recent results incorporating Sb to form a GaInNAsSb appear to overcome many of the prior problems with phase segregation. Hence, the progress has been fast and furious and the future for this materials system and the potential for its inclusion as a major part of the optical networks are indeed bright.

Original languageEnglish (US)
Title of host publicationDilute Nitride Semiconductors
Number of pages72
ISBN (Electronic)9780080445021
StatePublished - Jan 1 2005
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)


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