Localized heating on silicon field effect transistors: Device fabrication and temperature measurements in fluid

Oguz H. Elibol, Bobby Reddy, Pradeep R. Nair, Brian Dorvel, Felice Butler, Zahab S. Ahsan, Donald E. Bergstrom, Muhammad A. Alam, Rashid Bashir

Research output: Contribution to journalArticle

Abstract

We demonstrate electrically addressable localized heating in fluid at the dielectric surface of silicon-on-insulator field-effect transistors via radio-frequency Joule heating of mobile ions in the Debye layer. Measurement of fluid temperatures in close vicinity to surfaces poses a challenge due to the localized nature of the temperature profile. To address this, we developed a localized thermometry technique based on the fluorescence decay rate of covalently attached fluorophores to extract the temperature within 2 nm of any oxide surface. We demonstrate precise spatial control of voltage dependent temperature profiles on the transistor surfaces. Our results introduce a new dimension to present sensing systems by enabling dual purpose silicon transistor-heaters that serve both as field effect sensors as well as temperature controllers that could perform localized bio-chemical reactions in Lab on Chip applications.

Original languageEnglish (US)
Pages (from-to)2789-2795
Number of pages7
JournalLab on a chip
Volume9
Issue number19
DOIs
StatePublished - 2009

ASJC Scopus subject areas

  • Bioengineering
  • Biochemistry
  • Chemistry(all)
  • Biomedical Engineering

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  • Cite this

    Elibol, O. H., Reddy, B., Nair, P. R., Dorvel, B., Butler, F., Ahsan, Z. S., Bergstrom, D. E., Alam, M. A., & Bashir, R. (2009). Localized heating on silicon field effect transistors: Device fabrication and temperature measurements in fluid. Lab on a chip, 9(19), 2789-2795. https://doi.org/10.1039/b906048k