Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation

Kin Man Yu, W. Walukiewicz, S. Muto, H. C. Jin, J. R. Abelson, C. Clerc, C. J. Glover, M. C. Ridgway

Research output: Contribution to journalArticlepeer-review

Abstract

The influence of intense x-ray irradiation on the local bonding structure of Ga dopants in both hydrogen-free (a-Si) and hydrogenated (a-Si:H) amorphous Si thin films has been studied. Prior to x-ray exposure, extended x-ray absorption fine structure measurements revealed that H reduced the static disorder around the Ga atoms in amorphous Si. Thereafter, x-ray irradiation modified the local structure in the a-Si and a-Si:H samples. The Ga coordination number increased from <3.5 to ~3.80 atoms for both types of amorphous material as consistent with a greater fraction of electrically active, tetrahedrally coordinated dopant atoms. Also, greater structural disorder was observed around Ga atoms after x-ray irradiation suggesting that tetrahedrally coordinated Ga atoms were less well ordered than in threefold-coordinated sites.

Original languageEnglish (US)
Pages (from-to)3282-3284
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number21
DOIs
StatePublished - Nov 22 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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