TY - JOUR
T1 - Local structure of potassium doped nickel oxide
T2 - A combined experimental-theoretical study
AU - Wrobel, Friederike
AU - Shin, Hyeondeok
AU - Sterbinsky, George E.
AU - Hsiao, Haw Wen
AU - Zuo, Jian Min
AU - Ganesh, P.
AU - Krogel, Jaron T.
AU - Benali, Anouar
AU - Kent, Paul R.C.
AU - Heinonen, Olle
AU - Bhattacharya, Anand
N1 - The authors thank Mahalingam Balasubramanian for fruitful discussions and guidance in the XAFS analysis. This research used resources of the Advanced Photon Source, a US Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357. F.W, H.S, P.G., A.B., P.R.C.K., O.H., and A.B. were supported by the US Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division, as part of the Computational Materials Sciences Program and Center for Predictive Simulation of Functional Materials. An award of computer time was provided by the Innovative and Novel Computational Impact on Theory and Experiment (INCITE) program. This research used resources of the Argonne Leadership Computing Facility, which is a DOE Office of Science User Facility supported under Contract No. DE-AC02-06CH11357. vasp -DFT-based calculations used resources of the National Energy Research Scientific Computing Center (NERSC), a US Department of Energy Office of Science User Facility operated under Contract No. DE-AC02-05CH11231. Use of the Center for Nanoscale Materials, an Office of Science user facility, was supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. This paper has been authored by UT-Battelle, LLC under Contract No. DE-AC05-00OR22725 with the US Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this paper, or allow others to do so, for United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan [56] .
PY - 2019/11/18
Y1 - 2019/11/18
N2 - The electronic structure of Mott and charge-transfer insulators can be tuned through charge doping to achieve a variety of fascinating physical properties, e.g., superconductivity, colossal magnetoresistance, and metal-to-insulator transitions. Strong correlations between d electrons give rise to these properties but they are also the reason why they are inherently difficult to model. This holds true especially for the evolution of properties upon charge doping. Here, we hole-dope nickel oxide with potassium and elucidate the resulting structure by using a range of experimental and theoretical tools; potassium is twice as big as nickel and is expected to lead to distortions in its vicinity. Our measurements of the X-ray absorption fine structure (XAFS) show a significant distortion around the dopant and that the dopant is fully incorporated in the nickel oxide matrix. In parallel, the theoretical investigations include developing a Gaussian process for quantum Monte Carlo calculations to determine the lowest energy local structure around the potassium dopant. While the optimal structures determined from density functional theory and quantum Monte Carlo calculations agree very well, we find a large discrepancy between the experimentally determined structures and the theoretical doped structures. Further modeling indicates that the discrepancy is likely due to vacancy defects. Our work shows that potassium doping is a possible avenue to doping NiO, in spite of the size of the potassium dopant. In addition, the Gaussian process opens up a new route towards obtaining structure predictions outside of density functional theory.
AB - The electronic structure of Mott and charge-transfer insulators can be tuned through charge doping to achieve a variety of fascinating physical properties, e.g., superconductivity, colossal magnetoresistance, and metal-to-insulator transitions. Strong correlations between d electrons give rise to these properties but they are also the reason why they are inherently difficult to model. This holds true especially for the evolution of properties upon charge doping. Here, we hole-dope nickel oxide with potassium and elucidate the resulting structure by using a range of experimental and theoretical tools; potassium is twice as big as nickel and is expected to lead to distortions in its vicinity. Our measurements of the X-ray absorption fine structure (XAFS) show a significant distortion around the dopant and that the dopant is fully incorporated in the nickel oxide matrix. In parallel, the theoretical investigations include developing a Gaussian process for quantum Monte Carlo calculations to determine the lowest energy local structure around the potassium dopant. While the optimal structures determined from density functional theory and quantum Monte Carlo calculations agree very well, we find a large discrepancy between the experimentally determined structures and the theoretical doped structures. Further modeling indicates that the discrepancy is likely due to vacancy defects. Our work shows that potassium doping is a possible avenue to doping NiO, in spite of the size of the potassium dopant. In addition, the Gaussian process opens up a new route towards obtaining structure predictions outside of density functional theory.
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U2 - 10.1103/PhysRevMaterials.3.115003
DO - 10.1103/PhysRevMaterials.3.115003
M3 - Article
AN - SCOPUS:85075270682
SN - 2475-9953
VL - 3
JO - Physical Review Materials
JF - Physical Review Materials
IS - 11
M1 - 115003
ER -