Lithography with silicon ions

I. Adesida; M. Zhang; E. D. Wolf

doi:10.1007/BF02653989

Lithography with silicon ions

I. Adesida, M. Zhang, E. D. Wolf

Office of the Provost

Research output: Contribution to journal › Article › peer-review

Abstract

Some applications of focussed ion beams are discussed with special emphasis on the lithography aspects. Experimental data on the ranges of H⁺, Be⁺ and Si⁺⁺ in polymethylmethacrylate (PMMA) are presented. The sensitivity of PMMA to Si⁺⁺ ions is measured to be 0.35 μC/cm². It is shown by replication through a transmission mask that Si⁺⁺ ions with low to moderate incident energies, such as found in focussed ion beam systems, can be used for submicrometer lithography in single and multi-layer resist systems.

Original language	English (US)
Pages (from-to)	689-701
Number of pages	13
Journal	Journal of Electronic Materials
Volume	13
Issue number	4
DOIs	https://doi.org/10.1007/BF02653989
State	Published - Jul 1 1984

Keywords

Focussed ion beam
Lithography
Multilayer resist
Polymethyl methacrylate
Silicon ions

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/BF02653989

Fingerprint Dive into the research topics of 'Lithography with silicon ions'. Together they form a unique fingerprint.

Cite this

@article{a7bcf5d984024c21aabc47a0f47ce59a,

title = "Lithography with silicon ions",

abstract = "Some applications of focussed ion beams are discussed with special emphasis on the lithography aspects. Experimental data on the ranges of H+, Be+ and Si++ in polymethylmethacrylate (PMMA) are presented. The sensitivity of PMMA to Si++ ions is measured to be 0.35 μC/cm2. It is shown by replication through a transmission mask that Si++ ions with low to moderate incident energies, such as found in focussed ion beam systems, can be used for submicrometer lithography in single and multi-layer resist systems.",

keywords = "Focussed ion beam, Lithography, Multilayer resist, Polymethyl methacrylate, Silicon ions",

author = "I. Adesida and M. Zhang and Wolf, {E. D.}",

year = "1984",

month = jul,

day = "1",

doi = "10.1007/BF02653989",

language = "English (US)",

volume = "13",

pages = "689--701",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "4",

}

TY - JOUR

T1 - Lithography with silicon ions

AU - Adesida, I.

AU - Zhang, M.

AU - Wolf, E. D.

PY - 1984/7/1

Y1 - 1984/7/1

N2 - Some applications of focussed ion beams are discussed with special emphasis on the lithography aspects. Experimental data on the ranges of H+, Be+ and Si++ in polymethylmethacrylate (PMMA) are presented. The sensitivity of PMMA to Si++ ions is measured to be 0.35 μC/cm2. It is shown by replication through a transmission mask that Si++ ions with low to moderate incident energies, such as found in focussed ion beam systems, can be used for submicrometer lithography in single and multi-layer resist systems.

AB - Some applications of focussed ion beams are discussed with special emphasis on the lithography aspects. Experimental data on the ranges of H+, Be+ and Si++ in polymethylmethacrylate (PMMA) are presented. The sensitivity of PMMA to Si++ ions is measured to be 0.35 μC/cm2. It is shown by replication through a transmission mask that Si++ ions with low to moderate incident energies, such as found in focussed ion beam systems, can be used for submicrometer lithography in single and multi-layer resist systems.

KW - Focussed ion beam

KW - Lithography

KW - Multilayer resist

KW - Polymethyl methacrylate

KW - Silicon ions

UR - http://www.scopus.com/inward/record.url?scp=0021452486&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021452486&partnerID=8YFLogxK

U2 - 10.1007/BF02653989

DO - 10.1007/BF02653989

M3 - Article

AN - SCOPUS:0021452486

VL - 13

SP - 689

EP - 701

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 4

ER -

Lithography with silicon ions

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this