Abstract
Some applications of focussed ion beams are discussed with special emphasis on the lithography aspects. Experimental data on the ranges of H+, Be+ and Si++ in polymethylmethacrylate (PMMA) are presented. The sensitivity of PMMA to Si++ ions is measured to be 0.35 μC/cm2. It is shown by replication through a transmission mask that Si++ ions with low to moderate incident energies, such as found in focussed ion beam systems, can be used for submicrometer lithography in single and multi-layer resist systems.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 689-701 |
| Number of pages | 13 |
| Journal | Journal of Electronic Materials |
| Volume | 13 |
| Issue number | 4 |
| DOIs | |
| State | Published - Jul 1984 |
| Externally published | Yes |
Keywords
- Focussed ion beam
- Lithography
- Multilayer resist
- Polymethyl methacrylate
- Silicon ions
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry