Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15-1.31-μm spectral region

M. Feng, T. H. Windhorn, M. M. Tashima, G. E. Stillman

Research output: Contribution to journalArticlepeer-review

Abstract

The distribution coefficients for the growth of lattice-matched InGaAsP on (100) -InP substrates in the 1.15-1.31-μm spectral range have been determined. These results have been used in the growth of heterojunction photodiodes with quantum efficiencies ≥48% at 1.27 μm.

Original languageEnglish (US)
Pages (from-to)758-761
Number of pages4
JournalApplied Physics Letters
Volume32
Issue number11
DOIs
StatePublished - 1978

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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