Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15-1.31-μm spectral region

M. Feng; T. H. Windhorn; M. M. Tashima; G. E. Stillman

doi:10.1063/1.89920

Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15-1.31-μm spectral region

M. Feng, T. H. Windhorn, M. M. Tashima, G. E. Stillman

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The distribution coefficients for the growth of lattice-matched InGaAsP on (100) -InP substrates in the 1.15-1.31-μm spectral range have been determined. These results have been used in the growth of heterojunction photodiodes with quantum efficiencies ≥48% at 1.27 μm.

Original language	English (US)
Pages (from-to)	758-761
Number of pages	4
Journal	Applied Physics Letters
Volume	32
Issue number	11
DOIs	https://doi.org/10.1063/1.89920
State	Published - 1978

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Physics and Astronomy (miscellaneous)

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10.1063/1.89920

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@article{a3adbeab01794670a94de404c8d7a559,

title = "Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15-1.31-μm spectral region",

abstract = "The distribution coefficients for the growth of lattice-matched InGaAsP on (100) -InP substrates in the 1.15-1.31-μm spectral range have been determined. These results have been used in the growth of heterojunction photodiodes with quantum efficiencies ≥48% at 1.27 μm.",

author = "M. Feng and Windhorn, {T. H.} and Tashima, {M. M.} and Stillman, {G. E.}",

year = "1978",

doi = "10.1063/1.89920",

language = "English (US)",

volume = "32",

pages = "758--761",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15-1.31-μm spectral region

AU - Feng, M.

AU - Windhorn, T. H.

AU - Tashima, M. M.

AU - Stillman, G. E.

PY - 1978

Y1 - 1978

N2 - The distribution coefficients for the growth of lattice-matched InGaAsP on (100) -InP substrates in the 1.15-1.31-μm spectral range have been determined. These results have been used in the growth of heterojunction photodiodes with quantum efficiencies ≥48% at 1.27 μm.

AB - The distribution coefficients for the growth of lattice-matched InGaAsP on (100) -InP substrates in the 1.15-1.31-μm spectral range have been determined. These results have been used in the growth of heterojunction photodiodes with quantum efficiencies ≥48% at 1.27 μm.

UR - http://www.scopus.com/inward/record.url?scp=33845468245&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845468245&partnerID=8YFLogxK

U2 - 10.1063/1.89920

DO - 10.1063/1.89920

M3 - Article

AN - SCOPUS:33845468245

SN - 0003-6951

VL - 32

SP - 758

EP - 761

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15-1.31-μm spectral region

Abstract

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