TY - JOUR
T1 - Linear current-mode active pixel sensor
AU - Philipp, Ralf M.
AU - Orr, David
AU - Gruev, Viktor
AU - Van Der Spiegel, Jan
AU - Etienne-Cummings, Ralph
N1 - Funding Information:
Manuscript received September 11, 2006; revised June 6, 2007. This work was supported in part by the National Science Foundation, the Office of Naval Research and the U.S. Air Force Office of Scientific Research. Chip fabrication was provided by MOSIS.
PY - 2007/11
Y1 - 2007/11
N2 - A current mode CMOS active pixel sensor (APS) providing linear light-to-current conversion with inherently low fixed pattern noise (FPN) is presented. The pixel features adjustable-gain current output using a pMOS readout transistor in the linear region of operation. This paper discusses the pixel's design and operation, and presents an analysis of the pixel's temporal noise and FPN. Results for zero and first-order pixel mismatch are presented. The pixel was implemented in a both a 3.3 V 0.35 μm and a 1.8 V 0.18 μm CMOS process. The 0.35 μm process pixel had an uncorrected FPN of 1.4%/0.7% with/without column readout mismatch. The 0.18 μm process pixel had 0.4% FPN after delta-reset sampling (DRS). The pixel size in both processes was 10 × 10 μm2, with fill factors of 26% and 66%, respectively.
AB - A current mode CMOS active pixel sensor (APS) providing linear light-to-current conversion with inherently low fixed pattern noise (FPN) is presented. The pixel features adjustable-gain current output using a pMOS readout transistor in the linear region of operation. This paper discusses the pixel's design and operation, and presents an analysis of the pixel's temporal noise and FPN. Results for zero and first-order pixel mismatch are presented. The pixel was implemented in a both a 3.3 V 0.35 μm and a 1.8 V 0.18 μm CMOS process. The 0.35 μm process pixel had an uncorrected FPN of 1.4%/0.7% with/without column readout mismatch. The 0.18 μm process pixel had 0.4% FPN after delta-reset sampling (DRS). The pixel size in both processes was 10 × 10 μm2, with fill factors of 26% and 66%, respectively.
KW - CMOS analog integrated circuits
KW - image sensors
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U2 - 10.1109/JSSC.2007.907168
DO - 10.1109/JSSC.2007.907168
M3 - Article
AN - SCOPUS:50849133593
SN - 0018-9200
VL - 42
SP - 2482
EP - 2491
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
IS - 11
M1 - 4362109
ER -