Abstract
A Monte Carlo method based on the continuous slowing down approximation was used to calculate the spatial distribution of electron energy dissipation in a thin resist film on different thicknesses of silicon substrates. The distributions were then fitted with Gaussian functions. The Gaussian parameters obtained provided a measure of the impact of electron scattering on electron beam lithography.
| Original language | English (US) |
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| Pages | 189-199 |
| Number of pages | 11 |
| State | Published - 1980 |
| Event | Proc on the Symp on Electron and Ion Beam Sci and Technol, 9th Int Conf - St Louis, MO, USA Duration: May 11 1980 → May 16 1980 |
Conference
| Conference | Proc on the Symp on Electron and Ion Beam Sci and Technol, 9th Int Conf |
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| City | St Louis, MO, USA |
| Period | 5/11/80 → 5/16/80 |
ASJC Scopus subject areas
- Engineering(all)