@inproceedings{b670130a228041558948accfe37390a8,
title = "LIM Algorithms for MOSFET Models",
abstract = "This paper introduces algorithms for the simulation of MOSFETS using the latency insertion method (LIM). The algorithms are independent of the MOSFET model level chosen and account for current and charge effects. The latency insertion method (LIM) has been demonstrated as an optimum algorithm for the transient simulation of large networks. In particular, we address the generation of the update equations. Examples and comparisons are given for evaluating the algorithms.",
keywords = "latency, simulation, time step, transient",
author = "Jose Schutt-Aine and Patrick Goh",
note = "VI. ACKNOWLEGMENT This material is based upon work supported by the U.S Army Small Business Innovation Research (SBIR) Program office and the U.S. Army Research Office under Contract No.W911NF-16- C-0125 and by Zhejiang University under grant ZJU Research 083650.; 10th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2019 ; Conference date: 24-02-2019 Through 27-02-2019",
year = "2019",
month = mar,
day = "14",
doi = "10.1109/LASCAS.2019.8667600",
language = "English (US)",
series = "2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "33--36",
booktitle = "2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings",
address = "United States",
}