LIM Algorithms for MOSFET Models

Jose Schutt-Aine, Patrick Goh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper introduces algorithms for the simulation of MOSFETS using the latency insertion method (LIM). The algorithms are independent of the MOSFET model level chosen and account for current and charge effects. The latency insertion method (LIM) has been demonstrated as an optimum algorithm for the transient simulation of large networks. In particular, we address the generation of the update equations. Examples and comparisons are given for evaluating the algorithms.

Original languageEnglish (US)
Title of host publication2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages33-36
Number of pages4
ISBN (Electronic)9781728104522
DOIs
StatePublished - Mar 14 2019
Event10th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2019 - Armenia, Colombia
Duration: Feb 24 2019Feb 27 2019

Publication series

Name2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings

Conference

Conference10th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2019
CountryColombia
CityArmenia
Period2/24/192/27/19

Keywords

  • latency
  • simulation
  • time step
  • transient

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Hardware and Architecture

Cite this