Light-induced programming of Si nanocrystal flash memories

J. S. De Sousa, G. A. Farias, J. P. Leburton

Research output: Contribution to journalArticlepeer-review


We show theoretically that it is possible to achieve much faster programming performances in nanocrystal flash memory devices by means of a light-induced mechanism that inverts the direction of charge transfer between nanocrystals and device substrate in comparison to conventional voltage-induced programming. Our method is based on the self-consistent solutions of Hartree and Poisson equation for both electrons and holes with open boundary conditions.

Original languageEnglish (US)
Article number103508
JournalApplied Physics Letters
Issue number10
StatePublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Light-induced programming of Si nanocrystal flash memories'. Together they form a unique fingerprint.

Cite this