Light-induced programming of Si nanocrystal flash memories

J. S. De Sousa; G. A. Farias; J. P. Leburton

doi:10.1063/1.2839326

Light-induced programming of Si nanocrystal flash memories

J. S. De Sousa, G. A. Farias, J. P. Leburton

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We show theoretically that it is possible to achieve much faster programming performances in nanocrystal flash memory devices by means of a light-induced mechanism that inverts the direction of charge transfer between nanocrystals and device substrate in comparison to conventional voltage-induced programming. Our method is based on the self-consistent solutions of Hartree and Poisson equation for both electrons and holes with open boundary conditions.

Original language	English (US)
Article number	103508
Journal	Applied Physics Letters
Volume	92
Issue number	10
DOIs	https://doi.org/10.1063/1.2839326
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2839326

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title = "Light-induced programming of Si nanocrystal flash memories",

abstract = "We show theoretically that it is possible to achieve much faster programming performances in nanocrystal flash memory devices by means of a light-induced mechanism that inverts the direction of charge transfer between nanocrystals and device substrate in comparison to conventional voltage-induced programming. Our method is based on the self-consistent solutions of Hartree and Poisson equation for both electrons and holes with open boundary conditions.",

author = "{De Sousa}, {J. S.} and Farias, {G. A.} and Leburton, {J. P.}",

note = "Funding Information: J.S.S. is indebted to the Brazilian National Research Council (CNPq) for the financial support through CNPq/CT-ENERG Grant No. 504330/2003-9. The authors also acknowledge the CNPq/NanoBiostructures research network.",

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AU - Farias, G. A.

AU - Leburton, J. P.

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AB - We show theoretically that it is possible to achieve much faster programming performances in nanocrystal flash memory devices by means of a light-induced mechanism that inverts the direction of charge transfer between nanocrystals and device substrate in comparison to conventional voltage-induced programming. Our method is based on the self-consistent solutions of Hartree and Poisson equation for both electrons and holes with open boundary conditions.

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Light-induced programming of Si nanocrystal flash memories

Abstract

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