TY - JOUR
T1 - Light-induced conductance resonance in ultrasmall Si nanoparticles
AU - Therrien, Joel
AU - Belomoin, Gennadiy
AU - Nayfeh, Munir
PY - 2000/9/11
Y1 - 2000/9/11
N2 - Ultrasmall, uniform-size (∼1 nm) Si nanoparticles, dispersed from p-type boron-doped silicon, are reconstituted on a Si substrate. Electronic transport processes are studied by current-voltage spectroscopy at room temperature, using scanning tunneling microscopy, in a two-terminal configuration, under both dark conditions and light illumination. Unlike the dark conditions, we observe, under light irradiation, for negative tip biasing, a regular structure at ∼1.0 eV period. The series is discussed in terms of light-induced hole states that otherwise are highly infrequent in ultrasmall Si particles, under standard low doping.
AB - Ultrasmall, uniform-size (∼1 nm) Si nanoparticles, dispersed from p-type boron-doped silicon, are reconstituted on a Si substrate. Electronic transport processes are studied by current-voltage spectroscopy at room temperature, using scanning tunneling microscopy, in a two-terminal configuration, under both dark conditions and light illumination. Unlike the dark conditions, we observe, under light irradiation, for negative tip biasing, a regular structure at ∼1.0 eV period. The series is discussed in terms of light-induced hole states that otherwise are highly infrequent in ultrasmall Si particles, under standard low doping.
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U2 - 10.1063/1.1308524
DO - 10.1063/1.1308524
M3 - Article
AN - SCOPUS:0000553806
SN - 0003-6951
VL - 77
SP - 1668
EP - 1670
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 11
ER -