Light-induced conductance resonance in ultrasmall Si nanoparticles

Joel Therrien, Gennadiy Belomoin, Munir Nayfeh

Research output: Contribution to journalArticlepeer-review

Abstract

Ultrasmall, uniform-size (∼1 nm) Si nanoparticles, dispersed from p-type boron-doped silicon, are reconstituted on a Si substrate. Electronic transport processes are studied by current-voltage spectroscopy at room temperature, using scanning tunneling microscopy, in a two-terminal configuration, under both dark conditions and light illumination. Unlike the dark conditions, we observe, under light irradiation, for negative tip biasing, a regular structure at ∼1.0 eV period. The series is discussed in terms of light-induced hole states that otherwise are highly infrequent in ultrasmall Si particles, under standard low doping.

Original languageEnglish (US)
Pages (from-to)1668-1670
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number11
DOIs
StatePublished - Sep 11 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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