Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors

M. Feng, N. Holonyak, W. Hafez

Research output: Contribution to journalArticle

Abstract

The radiative recombination in the graded base layer of InGaP/GaAs heterojunction bipolar transistors (HBT) was discussed. The output light modulation from the base layer at 1 MHz, with the base current modulated at 1MHz, was also examined. For 'backend' fabrication of HBTs, a bisbenzocyclobutene (BCB) based etchback process was employed. It was observed that the output light signal traced the input signal which showed that HBT was light-emitting transistor (LET) that operates at transistor speed.

Original languageEnglish (US)
Pages (from-to)151-153
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number1
DOIs
StatePublished - Jan 5 2004

Fingerprint

bipolar transistors
light emission
heterojunctions
transistors
output
light modulation
radiative recombination
fabrication

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Light-emitting transistor : Light emission from InGaP/GaAs heterojunction bipolar transistors. / Feng, M.; Holonyak, N.; Hafez, W.

In: Applied Physics Letters, Vol. 84, No. 1, 05.01.2004, p. 151-153.

Research output: Contribution to journalArticle

@article{cf85c8a55f9b4221bb8395f66c65e883,
title = "Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors",
abstract = "The radiative recombination in the graded base layer of InGaP/GaAs heterojunction bipolar transistors (HBT) was discussed. The output light modulation from the base layer at 1 MHz, with the base current modulated at 1MHz, was also examined. For 'backend' fabrication of HBTs, a bisbenzocyclobutene (BCB) based etchback process was employed. It was observed that the output light signal traced the input signal which showed that HBT was light-emitting transistor (LET) that operates at transistor speed.",
author = "M. Feng and N. Holonyak and W. Hafez",
year = "2004",
month = "1",
day = "5",
doi = "10.1063/1.1637950",
language = "English (US)",
volume = "84",
pages = "151--153",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Light-emitting transistor

T2 - Light emission from InGaP/GaAs heterojunction bipolar transistors

AU - Feng, M.

AU - Holonyak, N.

AU - Hafez, W.

PY - 2004/1/5

Y1 - 2004/1/5

N2 - The radiative recombination in the graded base layer of InGaP/GaAs heterojunction bipolar transistors (HBT) was discussed. The output light modulation from the base layer at 1 MHz, with the base current modulated at 1MHz, was also examined. For 'backend' fabrication of HBTs, a bisbenzocyclobutene (BCB) based etchback process was employed. It was observed that the output light signal traced the input signal which showed that HBT was light-emitting transistor (LET) that operates at transistor speed.

AB - The radiative recombination in the graded base layer of InGaP/GaAs heterojunction bipolar transistors (HBT) was discussed. The output light modulation from the base layer at 1 MHz, with the base current modulated at 1MHz, was also examined. For 'backend' fabrication of HBTs, a bisbenzocyclobutene (BCB) based etchback process was employed. It was observed that the output light signal traced the input signal which showed that HBT was light-emitting transistor (LET) that operates at transistor speed.

UR - http://www.scopus.com/inward/record.url?scp=0942278263&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0942278263&partnerID=8YFLogxK

U2 - 10.1063/1.1637950

DO - 10.1063/1.1637950

M3 - Article

AN - SCOPUS:0942278263

VL - 84

SP - 151

EP - 153

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -