The radiative recombination in the graded base layer of InGaP/GaAs heterojunction bipolar transistors (HBT) was discussed. The output light modulation from the base layer at 1 MHz, with the base current modulated at 1MHz, was also examined. For 'backend' fabrication of HBTs, a bisbenzocyclobutene (BCB) based etchback process was employed. It was observed that the output light signal traced the input signal which showed that HBT was light-emitting transistor (LET) that operates at transistor speed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)