Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors

M. Feng, N. Holonyak, W. Hafez

Research output: Contribution to journalArticlepeer-review

Abstract

The radiative recombination in the graded base layer of InGaP/GaAs heterojunction bipolar transistors (HBT) was discussed. The output light modulation from the base layer at 1 MHz, with the base current modulated at 1MHz, was also examined. For 'backend' fabrication of HBTs, a bisbenzocyclobutene (BCB) based etchback process was employed. It was observed that the output light signal traced the input signal which showed that HBT was light-emitting transistor (LET) that operates at transistor speed.

Original languageEnglish (US)
Pages (from-to)151-153
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number1
DOIs
StatePublished - Jan 5 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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