Light emitting and lasing semiconductor methods and devices

Chao-Hsin Wu (Inventor), Han Wui Then (Inventor), Nick Holonyak (Inventor), Gabriel Walter (Inventor), Milton Feng (Inventor)

Research output: Patent


A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween.
Original languageEnglish (US)
U.S. patent number8509274
Filing date4/16/10
StatePublished - Aug 13 2013


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