Light emitting and lasing semiconductor devices and methods

Nick Holonyak (Inventor), Gabriel Walter (Inventor), Milton Feng (Inventor)

Research output: Patent

Abstract

A semiconductor light emitting device, including: a heterojunction bipolar light-emitting transistor having a base region between emitter and collector regions; emitter, base, and collector electrodes for coupling electrical signals with the emitter, base, and collector regions, respectively; and a quantum size region in the base region; the base region including a first base sub-region on the emitter side of the quantum size region, and a second base sub-region on the collector side of the quantum size region; and the first and second base sub-regions having asymmetrical band structures.
Original languageEnglish (US)
U.S. patent number8638830
Filing date1/7/10
StatePublished - Jan 28 2014

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