Light emission from an AlGaAs single-quantum-well heterostructure by electron excitation from a micromachined field emitter source

H. Busta; J. Dallesasse; S. Smith; J. Pogemiller; B. Zimmerman; R. Mathius

doi:10.1088/0960-1317/4/2/002

Light emission from an AlGaAs single-quantum-well heterostructure by electron excitation from a micromachined field emitter source

H. Busta, J. Dallesasse, S. Smith, J. Pogemiller, B. Zimmerman, R. Mathius

Research output: Contribution to journal › Article › peer-review

Abstract

An array of 812 gated Si field emitters arranged in a circular pattern with a diameter of 0.089 cm is used to bombard a 2.25 mu m thick, 220 mu m*460 mu m AlGaAs single-quantum-well, separate confinement heterostructure (SQW SCH) slab. Some of the emitted light is collected with a 50 mu m diameter core, multimode fiber that is positioned in close vicinity to the slab. With an excitation power of about 1.5 W cm^-2 (10 kV acceleration), a 1 s electron exposure time, and a duty cycle of 0.1 Hz, the room temperature wavelength of the dominant peak in the emission spectrum is 7987 AA, which corresponds to the lowest-energy electron-hole transition (E₁-E _hh1) in the quantum well.

Original language	English (US)
Article number	002
Pages (from-to)	55-59
Number of pages	5
Journal	Journal of Micromechanics and Microengineering
Volume	4
Issue number	2
DOIs	https://doi.org/10.1088/0960-1317/4/2/002
State	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Online availability

10.1088/0960-1317/4/2/002

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title = "Light emission from an AlGaAs single-quantum-well heterostructure by electron excitation from a micromachined field emitter source",

abstract = "An array of 812 gated Si field emitters arranged in a circular pattern with a diameter of 0.089 cm is used to bombard a 2.25 mu m thick, 220 mu m*460 mu m AlGaAs single-quantum-well, separate confinement heterostructure (SQW SCH) slab. Some of the emitted light is collected with a 50 mu m diameter core, multimode fiber that is positioned in close vicinity to the slab. With an excitation power of about 1.5 W cm-2 (10 kV acceleration), a 1 s electron exposure time, and a duty cycle of 0.1 Hz, the room temperature wavelength of the dominant peak in the emission spectrum is 7987 AA, which corresponds to the lowest-energy electron-hole transition (E1-E hh1) in the quantum well.",

author = "H. Busta and J. Dallesasse and S. Smith and J. Pogemiller and B. Zimmerman and R. Mathius",

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T1 - Light emission from an AlGaAs single-quantum-well heterostructure by electron excitation from a micromachined field emitter source

AU - Busta, H.

AU - Dallesasse, J.

AU - Smith, S.

AU - Pogemiller, J.

AU - Zimmerman, B.

AU - Mathius, R.

PY - 1994

Y1 - 1994

N2 - An array of 812 gated Si field emitters arranged in a circular pattern with a diameter of 0.089 cm is used to bombard a 2.25 mu m thick, 220 mu m*460 mu m AlGaAs single-quantum-well, separate confinement heterostructure (SQW SCH) slab. Some of the emitted light is collected with a 50 mu m diameter core, multimode fiber that is positioned in close vicinity to the slab. With an excitation power of about 1.5 W cm-2 (10 kV acceleration), a 1 s electron exposure time, and a duty cycle of 0.1 Hz, the room temperature wavelength of the dominant peak in the emission spectrum is 7987 AA, which corresponds to the lowest-energy electron-hole transition (E1-E hh1) in the quantum well.

AB - An array of 812 gated Si field emitters arranged in a circular pattern with a diameter of 0.089 cm is used to bombard a 2.25 mu m thick, 220 mu m*460 mu m AlGaAs single-quantum-well, separate confinement heterostructure (SQW SCH) slab. Some of the emitted light is collected with a 50 mu m diameter core, multimode fiber that is positioned in close vicinity to the slab. With an excitation power of about 1.5 W cm-2 (10 kV acceleration), a 1 s electron exposure time, and a duty cycle of 0.1 Hz, the room temperature wavelength of the dominant peak in the emission spectrum is 7987 AA, which corresponds to the lowest-energy electron-hole transition (E1-E hh1) in the quantum well.

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Light emission from an AlGaAs single-quantum-well heterostructure by electron excitation from a micromachined field emitter source

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