Light emission from an AlGaAs single-quantum-well heterostructure by electron excitation from a micromachined field emitter source

H. Busta, J. Dallesasse, S. Smith, J. Pogemiller, B. Zimmerman, R. Mathius

Research output: Contribution to journalArticlepeer-review

Abstract

An array of 812 gated Si field emitters arranged in a circular pattern with a diameter of 0.089 cm is used to bombard a 2.25 mu m thick, 220 mu m*460 mu m AlGaAs single-quantum-well, separate confinement heterostructure (SQW SCH) slab. Some of the emitted light is collected with a 50 mu m diameter core, multimode fiber that is positioned in close vicinity to the slab. With an excitation power of about 1.5 W cm-2 (10 kV acceleration), a 1 s electron exposure time, and a duty cycle of 0.1 Hz, the room temperature wavelength of the dominant peak in the emission spectrum is 7987 AA, which corresponds to the lowest-energy electron-hole transition (E1-E hh1) in the quantum well.

Original languageEnglish (US)
Article number002
Pages (from-to)55-59
Number of pages5
JournalJournal of Micromechanics and Microengineering
Volume4
Issue number2
DOIs
StatePublished - 1994
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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