LEEM study of island decay on Si(1 1 0)

Fumiya Watanabe; S. Kodambaka; Waclaw Swiech; J. E. Greene; David G. Cahill

doi:10.1016/j.susc.2004.09.014

LEEM study of island decay on Si(1 1 0)

Fumiya Watanabe, S. Kodambaka, Waclaw Swiech, J. E. Greene, David G. Cahill

Research output: Contribution to journal › Article › peer-review

Abstract

Laser texturing enables the observation of island decays on the '1 × 1' high temperature surface of Si(1 1 0) by low energy electron microscopy. At temperatures above the phase transition (T= 790-980°C), the decay of the island areas exhibits a nonlinear dependence on time indicative of surface diffusion limited mass transport. The aspect ratios of the islands during the decay show a weak temperature dependence despite the fact that surface is anisotropic. We have obtained the activation energy of mass transport, the kink energy, step energy, and step stiffness for Si(1 1 0).

Original language	English (US)
Pages (from-to)	425-432
Number of pages	8
Journal	Surface Science
Volume	572
Issue number	2-3
DOIs	https://doi.org/10.1016/j.susc.2004.09.014
State	Published - Nov 20 2004

Keywords

Laser methods
Low-energy electron microscopy (LEEM)
Silicon
Surface diffusion

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Condensed Matter Physics
Surfaces and Interfaces

Online availability

10.1016/j.susc.2004.09.014

Library availability

Discover UIUC Full Text

Cite this

@article{228f93901fce4ca9a659986b411af93f,

title = "LEEM study of island decay on Si(1 1 0)",

abstract = "Laser texturing enables the observation of island decays on the '1 × 1' high temperature surface of Si(1 1 0) by low energy electron microscopy. At temperatures above the phase transition (T= 790-980°C), the decay of the island areas exhibits a nonlinear dependence on time indicative of surface diffusion limited mass transport. The aspect ratios of the islands during the decay show a weak temperature dependence despite the fact that surface is anisotropic. We have obtained the activation energy of mass transport, the kink energy, step energy, and step stiffness for Si(1 1 0).",

keywords = "Laser methods, Low-energy electron microscopy (LEEM), Silicon, Surface diffusion",

author = "Fumiya Watanabe and S. Kodambaka and Waclaw Swiech and Greene, {J. E.} and Cahill, {David G.}",

note = "Funding Information: We thank J.B. Hannon for helpful discussion at the beginning stage of this study. This work was supported by the U.S. Department of Energy, Division of Materials Sciences under Award No. DEFG02-91ER45439, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign. The LEEM observation was carried out at the Center for Microanalysis of Materials, which is partially supported by the U.S. Department of Energy under grant DEFG02-91-ER45439.",

year = "2004",

month = nov,

day = "20",

doi = "10.1016/j.susc.2004.09.014",

language = "English (US)",

volume = "572",

pages = "425--432",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "2-3",

}

TY - JOUR

T1 - LEEM study of island decay on Si(1 1 0)

AU - Watanabe, Fumiya

AU - Kodambaka, S.

AU - Swiech, Waclaw

AU - Greene, J. E.

AU - Cahill, David G.

N1 - Funding Information: We thank J.B. Hannon for helpful discussion at the beginning stage of this study. This work was supported by the U.S. Department of Energy, Division of Materials Sciences under Award No. DEFG02-91ER45439, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign. The LEEM observation was carried out at the Center for Microanalysis of Materials, which is partially supported by the U.S. Department of Energy under grant DEFG02-91-ER45439.

PY - 2004/11/20

Y1 - 2004/11/20

N2 - Laser texturing enables the observation of island decays on the '1 × 1' high temperature surface of Si(1 1 0) by low energy electron microscopy. At temperatures above the phase transition (T= 790-980°C), the decay of the island areas exhibits a nonlinear dependence on time indicative of surface diffusion limited mass transport. The aspect ratios of the islands during the decay show a weak temperature dependence despite the fact that surface is anisotropic. We have obtained the activation energy of mass transport, the kink energy, step energy, and step stiffness for Si(1 1 0).

AB - Laser texturing enables the observation of island decays on the '1 × 1' high temperature surface of Si(1 1 0) by low energy electron microscopy. At temperatures above the phase transition (T= 790-980°C), the decay of the island areas exhibits a nonlinear dependence on time indicative of surface diffusion limited mass transport. The aspect ratios of the islands during the decay show a weak temperature dependence despite the fact that surface is anisotropic. We have obtained the activation energy of mass transport, the kink energy, step energy, and step stiffness for Si(1 1 0).

KW - Laser methods

KW - Low-energy electron microscopy (LEEM)

KW - Silicon

KW - Surface diffusion

UR - http://www.scopus.com/inward/record.url?scp=9744277639&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=9744277639&partnerID=8YFLogxK

U2 - 10.1016/j.susc.2004.09.014

DO - 10.1016/j.susc.2004.09.014

M3 - Article

AN - SCOPUS:9744277639

SN - 0039-6028

VL - 572

SP - 425

EP - 432

JO - Surface Science

JF - Surface Science

IS - 2-3

ER -

LEEM study of island decay on Si(1 1 0)

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this