Layout optimization of ESD protection diodes for high-frequency I/Os

Karan Bhatia; Nathan Jack; Elyse Rosenbaum

doi:10.1109/TDMR.2009.2025956

Layout optimization of ESD protection diodes for high-frequency I/Os

Karan Bhatia, Nathan Jack, Elyse Rosenbaum

Research output: Contribution to journal › Article › peer-review

Abstract

Layout options for CMOS ESD diodes' p-n junction geometry and metal routing are investigated in this paper. Experiments are performed using 90- and 180-nm technologies. Using the figures of merit $I-{\rm CP}/C$ and $R-{\rm ON} \ast C$, it is shown that twin-well stripe diodes with nonminimum diffusion width and high-level broadside routing are optimum for gigahertz-frequency I/Os. In addition, the suitability of ESD diodes formed with the isolated P-well/deep N-well diffusions available in triple-well technologies is evaluated for high-speed I/O applications.

Original language	English (US)
Article number	5153318
Pages (from-to)	465-475
Number of pages	11
Journal	IEEE Transactions on Device and Materials Reliability
Volume	9
Issue number	3
DOIs	https://doi.org/10.1109/TDMR.2009.2025956
State	Published - Sep 2009

Keywords

CMOS integrated circuits
Diodes
Electrostatic discharges
Metallization

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

Online availability

10.1109/TDMR.2009.2025956

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abstract = "Layout options for CMOS ESD diodes' p-n junction geometry and metal routing are investigated in this paper. Experiments are performed using 90- and 180-nm technologies. Using the figures of merit $I-{\rm CP}/C$ and $R-{\rm ON} \ast C$, it is shown that twin-well stripe diodes with nonminimum diffusion width and high-level broadside routing are optimum for gigahertz-frequency I/Os. In addition, the suitability of ESD diodes formed with the isolated P-well/deep N-well diffusions available in triple-well technologies is evaluated for high-speed I/O applications.",

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Layout optimization of ESD protection diodes for high-frequency I/Os

Abstract

Keywords

ASJC Scopus subject areas

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