TY - GEN
T1 - Layout-aware, distributed, compact model for multi-finger MOSFETs operating under ESD conditions
AU - Meng, Kuo Hsuan
AU - Rosenbaum, Elyse
PY - 2013/10/16
Y1 - 2013/10/16
N2 - This work presents a scalable, distributed model for multi-finger MOSFETs operating under ESD conditions. A three-terminal transmission line pulsing measurement technique enables the model parameter extraction. The distributed model can reproduce trigger voltage, on-state resistance, and non-uniform turn-on effect as functions of layout geometries.
AB - This work presents a scalable, distributed model for multi-finger MOSFETs operating under ESD conditions. A three-terminal transmission line pulsing measurement technique enables the model parameter extraction. The distributed model can reproduce trigger voltage, on-state resistance, and non-uniform turn-on effect as functions of layout geometries.
UR - http://www.scopus.com/inward/record.url?scp=84890514163&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84890514163&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84890514163
SN - 9781585372324
T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
BT - Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013
T2 - 2013 35th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2013
Y2 - 8 September 2013 through 13 September 2013
ER -