Layout-aware, distributed, compact model for multi-finger MOSFETs operating under ESD conditions

Kuo Hsuan Meng, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work presents a scalable, distributed model for multi-finger MOSFETs operating under ESD conditions. A three-terminal transmission line pulsing measurement technique enables the model parameter extraction. The distributed model can reproduce trigger voltage, on-state resistance, and non-uniform turn-on effect as functions of layout geometries.

Original languageEnglish (US)
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013
StatePublished - Oct 16 2013
Event2013 35th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2013 - Las Vegas, NV, United States
Duration: Sep 8 2013Sep 13 2013

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)0739-5159

Other

Other2013 35th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2013
CountryUnited States
CityLas Vegas, NV
Period9/8/139/13/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Meng, K. H., & Rosenbaum, E. (2013). Layout-aware, distributed, compact model for multi-finger MOSFETs operating under ESD conditions. In Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013 [6635912] (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).