Layer disordering of n-type (Se) and p-type (C) Al_xGa _1-xAs-GaAs superlattices by S diffusion

Keyphrases

• Absorption Measurement 50%
• AlxGa1-xN 50%
• C-doped 50%
• Cross Section Measurement 50%
• Defect Vacancy 50%
• Diffusion Depth 50%
• Gallium Arsenide 100%
• Minimal Displacement Vector 50%
• Native Defects 50%
• P-type 100%
• Se-doped 50%
• Secondary Ion Mass Spectrometry 50%
• Shallow Angles 50%
• Superlattices 100%
• V(III) 50%

Material Science

• Gallium Arsenide 100%
• Secondary Ion Mass Spectrometry 50%
• Superlattice 100%
• Vacancy Defect 50%

Chemistry

• Crystal Vacancy 50%
• Secondary Ion Mass Spectroscopy 50%
• Superlattice 100%