Layer disordering of n-type (Se) and p-type (C) AlxGa 1-xAs-GaAs superlattices by S diffusion

J. S. Major; J. M. Dallesasse; L. J. Guido; J. E. Baker; W. E. Plano; A. R. Sugg; E. J. Vesely; T. A. Richard; N. Holonyak

doi:10.1063/1.103126

Layer disordering of n-type (Se) and p-type (C) Al_xGa _1-xAs-GaAs superlattices by S diffusion

J. S. Major, J. M. Dallesasse, L. J. Guido, J. E. Baker, W. E. Plano, A. R. Sugg, E. J. Vesely, T. A. Richard, N. Holonyak

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Abstract

Data are presented showing limited layer disordering (or intermixing) of S-diffused Se-doped or C-doped Al_xGa_1-xAs-GaAs superlattices. The S diffusion is characterized via secondary-ion mass spectroscopy, shallow angle beveled cross sections, and absorption measurements. Limited intermixing of column-III-site atoms (Al⇄Ga) as well as minimal displacement of the column-V-site acceptor C is observed. The S diffusion depth is much greater than that of the layer disordering, the magnitude of which is similar to that of native-defect vacancy-assisted disordering (vacancy V _III).

Original language	English (US)
Pages (from-to)	1720-1722
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	18
DOIs	https://doi.org/10.1063/1.103126
State	Published - 1990

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.103126

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title = "Layer disordering of n-type (Se) and p-type (C) AlxGa 1-xAs-GaAs superlattices by S diffusion",

abstract = "Data are presented showing limited layer disordering (or intermixing) of S-diffused Se-doped or C-doped AlxGa1-xAs-GaAs superlattices. The S diffusion is characterized via secondary-ion mass spectroscopy, shallow angle beveled cross sections, and absorption measurements. Limited intermixing of column-III-site atoms (Al⇄Ga) as well as minimal displacement of the column-V-site acceptor C is observed. The S diffusion depth is much greater than that of the layer disordering, the magnitude of which is similar to that of native-defect vacancy-assisted disordering (vacancy V III).",

author = "Major, {J. S.} and Dallesasse, {J. M.} and Guido, {L. J.} and Baker, {J. E.} and Plano, {W. E.} and Sugg, {A. R.} and Vesely, {E. J.} and Richard, {T. A.} and N. Holonyak",

year = "1990",

doi = "10.1063/1.103126",

language = "English (US)",

volume = "56",

pages = "1720--1722",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Layer disordering of n-type (Se) and p-type (C) AlxGa 1-xAs-GaAs superlattices by S diffusion

AU - Major, J. S.

AU - Dallesasse, J. M.

AU - Guido, L. J.

AU - Baker, J. E.

AU - Plano, W. E.

AU - Sugg, A. R.

AU - Vesely, E. J.

AU - Richard, T. A.

AU - Holonyak, N.

PY - 1990

Y1 - 1990

N2 - Data are presented showing limited layer disordering (or intermixing) of S-diffused Se-doped or C-doped AlxGa1-xAs-GaAs superlattices. The S diffusion is characterized via secondary-ion mass spectroscopy, shallow angle beveled cross sections, and absorption measurements. Limited intermixing of column-III-site atoms (Al⇄Ga) as well as minimal displacement of the column-V-site acceptor C is observed. The S diffusion depth is much greater than that of the layer disordering, the magnitude of which is similar to that of native-defect vacancy-assisted disordering (vacancy V III).

AB - Data are presented showing limited layer disordering (or intermixing) of S-diffused Se-doped or C-doped AlxGa1-xAs-GaAs superlattices. The S diffusion is characterized via secondary-ion mass spectroscopy, shallow angle beveled cross sections, and absorption measurements. Limited intermixing of column-III-site atoms (Al⇄Ga) as well as minimal displacement of the column-V-site acceptor C is observed. The S diffusion depth is much greater than that of the layer disordering, the magnitude of which is similar to that of native-defect vacancy-assisted disordering (vacancy V III).

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