Layer-by-layer transfer of multiple, large area sheets of graphene grown in multilayer stacks on a single SiC wafer

Sakulsuk Unarunotai, Justin C. Koepke, Cheng Lin Tsai, Frank Du, Cesar E. Chialvo, Yuya Murata, Rick Haasch, Ivan Petrov, Nadya Mason, Moonsub Shim, Joseph Lyding, John A. Rogers

Research output: Contribution to journalArticle

Abstract

Here we report a technique for transferring graphene layers, one by one, from a multilayer deposit formed by epitaxial growth on the Si-terminated face of a 6H-SiC substrate. The procedure uses a bilayer film of palladium/polyimide deposited onto the graphene coated SiC, which is then mechanically peeled away and placed on a target substrate. Orthogonal etching of the palladium and polyimide leaves isolated sheets of graphene with sizes of square centimeters. Repeating these steps transfers additional sheets from the same SiC substrate. Raman spectroscopy, scanning tunneling spectroscopy, low-energy electron diffraction and X-ray photoelectron spectroscopy, together with scanning tunneling, atomic force, optical, and scanning electron microscopy reveal key properties of the materials. The sheet resistances determined from measurements of four point probe devices were found to be ∼2 kΣ/square, close to expectation. Graphene crossbar structures fabricated in stacked configurations demonstrate the versatility of the procedures.

Original languageEnglish (US)
Pages (from-to)5591-5598
Number of pages8
JournalACS Nano
Volume4
Issue number10
DOIs
StatePublished - Oct 26 2010

Keywords

  • epitaxial growth
  • four-point measurement
  • graphene
  • layer-by-layer
  • silicon carbide
  • transfer technique

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

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  • Cite this

    Unarunotai, S., Koepke, J. C., Tsai, C. L., Du, F., Chialvo, C. E., Murata, Y., Haasch, R., Petrov, I., Mason, N., Shim, M., Lyding, J., & Rogers, J. A. (2010). Layer-by-layer transfer of multiple, large area sheets of graphene grown in multilayer stacks on a single SiC wafer. ACS Nano, 4(10), 5591-5598. https://doi.org/10.1021/nn101896a