Lattice parameter changes and point defect reactions in low temperature electron irradiated AlAs

A. Gaber, H. Zillgen, P. Ehrhart, P. Partyka, R. S. Averback

Research output: Contribution to journalArticlepeer-review

Abstract

X-ray diffraction was employed to investigate damage accumulation and the subsequent thermally activated annealing reactions in AlAs layers on GaAs substrates. Irradiations were performed at 4.6 K with 2.5 MeV electrons up to a total dose of 2 × 1019 electrons/cm2. The irradiation-induced increase of the lattice parameter amounts to about half of the changes observed in the GaAs substrates. There is a major annealing step near room temperature, a rather continuous annealing up to 500 K, and a final recovery stage between 700 and 900 K. The observations are discussed in relation to the resistance of AlAs against amorphization under ion irradiation.

Original languageEnglish (US)
Pages (from-to)5348-5351
Number of pages4
JournalJournal of Applied Physics
Volume82
Issue number11
DOIs
StatePublished - Dec 1 1997

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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