Abstract
X-ray diffraction was employed to investigate damage accumulation and the subsequent thermally activated annealing reactions in AlAs layers on GaAs substrates. Irradiations were performed at 4.6 K with 2.5 MeV electrons up to a total dose of 2 × 1019 electrons/cm2. The irradiation-induced increase of the lattice parameter amounts to about half of the changes observed in the GaAs substrates. There is a major annealing step near room temperature, a rather continuous annealing up to 500 K, and a final recovery stage between 700 and 900 K. The observations are discussed in relation to the resistance of AlAs against amorphization under ion irradiation.
Original language | English (US) |
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Pages (from-to) | 5348-5351 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 82 |
Issue number | 11 |
DOIs | |
State | Published - Dec 1 1997 |
ASJC Scopus subject areas
- General Physics and Astronomy