Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniques

Milton Feng, L. W. Cook, M. M. Tashima, G. E. Stillman

Research output: Contribution to journalArticle

Abstract

Constant composition InGaAsP epitaxial layers can be grown on (100) InP substrates at a constant temperature using the diffusion-limited step-cooling growth technique, and in general, compositionally graded layers result when the diffusion-limited equilibrium-cooling, supercooling, and two-phase-solution growth techniques are used. The lattice constant and energy gap of the epitaxial layers grown using the step-cooling technique are nearly independent of small variations of X p l and the amount of step cooling, but are dependent on growth temperature. The dependence of lattice constant and energy gap of the epitaxial layers on X Ga l and X As l has been determined for the step-cooling and supercool ing techniques.

Original languageEnglish (US)
Pages (from-to)241-280
Number of pages40
JournalJournal of Electronic Materials
Volume9
Issue number2
DOIs
StatePublished - Mar 1 1980

Keywords

  • InGaAsP alloys
  • LPE
  • distribution coefficients
  • lattice constant

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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