Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniques

Milton Feng, L. W. Cook, M. M. Tashima, G. E. Stillman

Research output: Contribution to journalArticle

Abstract

Constant composition InGaAsP epitaxial layers can be grown on (100) InP substrates at a constant temperature using the diffusion-limited step-cooling growth technique, and in general, compositionally graded layers result when the diffusion-limited equilibrium-cooling, supercooling, and two-phase-solution growth techniques are used. The lattice constant and energy gap of the epitaxial layers grown using the step-cooling technique are nearly independent of small variations of X p l and the amount of step cooling, but are dependent on growth temperature. The dependence of lattice constant and energy gap of the epitaxial layers on X Ga l and X As l has been determined for the step-cooling and supercool ing techniques.

Original languageEnglish (US)
Pages (from-to)241-280
Number of pages40
JournalJournal of Electronic Materials
Volume9
Issue number2
DOIs
StatePublished - Mar 1 1980

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Supercooling
supercooling
Lattice constants
Surface morphology
Energy gap
Cooling
Epitaxial layers
cooling
Growth temperature
Cool-X-A
temperature
Substrates
Chemical analysis

Keywords

  • InGaAsP alloys
  • LPE
  • distribution coefficients
  • lattice constant

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

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title = "Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniques",
abstract = "Constant composition InGaAsP epitaxial layers can be grown on (100) InP substrates at a constant temperature using the diffusion-limited step-cooling growth technique, and in general, compositionally graded layers result when the diffusion-limited equilibrium-cooling, supercooling, and two-phase-solution growth techniques are used. The lattice constant and energy gap of the epitaxial layers grown using the step-cooling technique are nearly independent of small variations of X p l and the amount of step cooling, but are dependent on growth temperature. The dependence of lattice constant and energy gap of the epitaxial layers on X Ga l and X As l has been determined for the step-cooling and supercool ing techniques.",
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author = "Milton Feng and Cook, {L. W.} and Tashima, {M. M.} and Stillman, {G. E.}",
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TY - JOUR

T1 - Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniques

AU - Feng, Milton

AU - Cook, L. W.

AU - Tashima, M. M.

AU - Stillman, G. E.

PY - 1980/3/1

Y1 - 1980/3/1

N2 - Constant composition InGaAsP epitaxial layers can be grown on (100) InP substrates at a constant temperature using the diffusion-limited step-cooling growth technique, and in general, compositionally graded layers result when the diffusion-limited equilibrium-cooling, supercooling, and two-phase-solution growth techniques are used. The lattice constant and energy gap of the epitaxial layers grown using the step-cooling technique are nearly independent of small variations of X p l and the amount of step cooling, but are dependent on growth temperature. The dependence of lattice constant and energy gap of the epitaxial layers on X Ga l and X As l has been determined for the step-cooling and supercool ing techniques.

AB - Constant composition InGaAsP epitaxial layers can be grown on (100) InP substrates at a constant temperature using the diffusion-limited step-cooling growth technique, and in general, compositionally graded layers result when the diffusion-limited equilibrium-cooling, supercooling, and two-phase-solution growth techniques are used. The lattice constant and energy gap of the epitaxial layers grown using the step-cooling technique are nearly independent of small variations of X p l and the amount of step cooling, but are dependent on growth temperature. The dependence of lattice constant and energy gap of the epitaxial layers on X Ga l and X As l has been determined for the step-cooling and supercool ing techniques.

KW - InGaAsP alloys

KW - LPE

KW - distribution coefficients

KW - lattice constant

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