Lateral scaling of 0.25 μm InP/InGaAs SHBTs with InAs emitter cap

W. Hafez; M. Feng

doi:10.1049/el:20045962

Lateral scaling of 0.25 μm InP/InGaAs SHBTs with InAs emitter cap

W. Hafez, M. Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

InP/InGaAs single heterojunction bipolar transistors (SHBTs) have been fabricated using a highly doped InAs emitter cap for a 50% reduction in emitter resistance to allow aggressive lateral scaling to increase f_MAX- Type I InP SHBTs have been fabricated with 0.25 μm emitter widths and achieve f_MAX values as high as 478 GHz on a laterally scaled L_E=1 μm device, and maintain breakdown voltages greater than 4 V.

Original language	English (US)
Pages (from-to)	1151-1153
Number of pages	3
Journal	Electronics Letters
Volume	40
Issue number	18
DOIs	https://doi.org/10.1049/el:20045962
State	Published - Sep 2 2004

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:20045962

Library availability

Discover UIUC Full Text

Cite this

@article{5093cbb73902438fb05d60623393ff29,

title = "Lateral scaling of 0.25 μm InP/InGaAs SHBTs with InAs emitter cap",

abstract = "InP/InGaAs single heterojunction bipolar transistors (SHBTs) have been fabricated using a highly doped InAs emitter cap for a 50% reduction in emitter resistance to allow aggressive lateral scaling to increase fMAX- Type I InP SHBTs have been fabricated with 0.25 μm emitter widths and achieve fMAX values as high as 478 GHz on a laterally scaled LE=1 μm device, and maintain breakdown voltages greater than 4 V.",

author = "W. Hafez and M. Feng",

year = "2004",

month = sep,

day = "2",

doi = "10.1049/el:20045962",

language = "English (US)",

volume = "40",

pages = "1151--1153",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons, Ltd.",

number = "18",

}

TY - JOUR

T1 - Lateral scaling of 0.25 μm InP/InGaAs SHBTs with InAs emitter cap

AU - Hafez, W.

AU - Feng, M.

PY - 2004/9/2

Y1 - 2004/9/2

N2 - InP/InGaAs single heterojunction bipolar transistors (SHBTs) have been fabricated using a highly doped InAs emitter cap for a 50% reduction in emitter resistance to allow aggressive lateral scaling to increase fMAX- Type I InP SHBTs have been fabricated with 0.25 μm emitter widths and achieve fMAX values as high as 478 GHz on a laterally scaled LE=1 μm device, and maintain breakdown voltages greater than 4 V.

AB - InP/InGaAs single heterojunction bipolar transistors (SHBTs) have been fabricated using a highly doped InAs emitter cap for a 50% reduction in emitter resistance to allow aggressive lateral scaling to increase fMAX- Type I InP SHBTs have been fabricated with 0.25 μm emitter widths and achieve fMAX values as high as 478 GHz on a laterally scaled LE=1 μm device, and maintain breakdown voltages greater than 4 V.

UR - http://www.scopus.com/inward/record.url?scp=4544286145&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4544286145&partnerID=8YFLogxK

U2 - 10.1049/el:20045962

DO - 10.1049/el:20045962

M3 - Article

AN - SCOPUS:4544286145

SN - 0013-5194

VL - 40

SP - 1151

EP - 1153

JO - Electronics Letters

JF - Electronics Letters

IS - 18

ER -

Lateral scaling of 0.25 μm InP/InGaAs SHBTs with InAs emitter cap

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this