Lateral bipolar transistor fabricated on a deep-submicron technology

Keyphrases

• Lateral Insulated Gate Bipolar Transistor (LIGBT) 100%
• Deep Submicron Technology 100%
• Semiconductors 50%
• MOSFET 50%
• Bulk Silicon 50%
• SiGe 50%
• Submicron 50%
• Doping Profile 50%
• Self-aligned 50%
• Common Emitter Current Gain 50%
• Gate Oxide 50%
• Silicon-on-insulator 50%
• Breakdown Voltage 50%
• Asymmetric Collector 50%
• Large Tilt Angle 50%
• Carrier Confinement 50%
• Santa Clara 50%
• Close Cooperation 50%

Engineering

• Bipolar Transistor 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Bulk Silicon 50%
• Current Gain 50%
• Implant 50%
• Gate Oxide 50%
• Silicon on Insulator 50%
• Breakdown Voltage 50%

Material Science

• Bipolar Transistor 100%
• Silicon 50%
• Oxide Compound 50%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Bulk Silicon 50%