Abstract
The performance of a NPN Lateral Bipolar Transistor (LBJT), based on a minimally modified submicron MOSFET without gate oxide, was studied by means of simulations and measurements on fabricated devices. Large-tilt angle, single-sided implants were successfully used to control the breakdown voltage by tailoring the asymmetric collector doping profile in a self-aligned way. Because of the lack of carrier confinement in the base of devices built on bulk silicon the common emitter current gain is lower than one. Two options for solving this problem were studied using simulators: Building the LBJT on Silicon-On-Insulator (SOI) or introducing SiGe into the base. This project was developed in close cooperation with National Semiconductor Corp., Santa Clara, California.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 37-42 |
| Number of pages | 6 |
| Journal | Biennial University/Government/Industry Microelectronics Symposium - Proceedings |
| State | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 13th Biennial University / Goverment / Industry Microelectronics Symposium (UGIM) - Minneapolis, MN, USA Duration: Jun 20 1999 → Jun 23 1999 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering