Latency Insertion Method for Fast Electro-Thermal Simulation of FinFET with Self-Heating Effect

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Self-heating effect (SHE) is prominent for FinFET devices due to their large currents and compact sizes. With SHE, the power in FinFETs is dissipated into heat, affecting device performance. Thus, fast and accurate electro-thermal analysis of FinFETs incorporating SHE is important. This paper proposes the Latency Insertion Method (LIM) algorithm for fast FinFET electro-thermal simulation with SHE. Based on the BSIM-CMG model, the proposed method leapfrogs between the conventional electrical LIM algorithm and the thermal equations. The LIM results are compared to SPICE-based commercial software to prove the accuracy and the speed.

Original languageEnglish (US)
Title of host publication33rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350351231
DOIs
StatePublished - 2024
Event33rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2024 - Toronto, Canada
Duration: Oct 6 2024Oct 9 2024

Publication series

Name33rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2024

Conference

Conference33rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2024
Country/TerritoryCanada
CityToronto
Period10/6/2410/9/24

Keywords

  • BSIM-CMG
  • circuit simulation
  • electro-thermal simulation
  • FinFET
  • latency insertion method
  • self-heating effect

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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