@inproceedings{19d91d26b5144545b5f269b0d7d8c33e,
title = "Latch-up model of non-collinear PNPN structures",
abstract = "A scalable I-V model for latch-up in non-collinear PNPN devices is adapted from a previous model for collinear SCR devices. The model is applied to 14-nm FinFET test structures. Layout scaling trends for key latch-up metrics, such as holding and trigger voltage, are captured by the model in circuit simulation. TCAD simulation is used to gain physical insight into the behavior of non-collinear PNPN devices.",
author = "Collin Reiman and Nathan Jack and Elyse Rosenbaum",
note = "Publisher Copyright: {\textcopyright} 2018 ESD Association. All rights reserved.; 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018 ; Conference date: 23-09-2018 Through 28-09-2018",
year = "2018",
month = oct,
day = "25",
language = "English (US)",
series = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings",
publisher = "ESD Association",
booktitle = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2018",
}