Laser photolysis and ionization of polyatomic molecules: Film growth and spectroscopic diagnostics

J. G. Eden, J. F. Osmundsen, C. C. Abele, D. B. Geohegan

Research output: Contribution to journalConference article

Abstract

Experiments are described in which semiconductor or metal films are grown from the vapor phase by photodissociating or photoionizing diatomic or polyatomic molecules. The photolysis of GeH4 at 248 nm (hw = 5 eV) is initiated by a two photon process that liberates the germylene radical GeH2. Spatially and temporally-resolved concentration profiles for several excited states of GeH and atomic Ge have been measured near the substrate. Thin indium films have been deposited on nickel substrates by dissociatively ionizing indium monoiodide (Inl) to produce In+ - I- ion pairs. The dynamics of ion pair production for thallium iodide or Inl vapor photoexcited at 193 nm have been studied by combining an excimer laser with microwave absorption techniques.

Original languageEnglish (US)
Pages (from-to)22-24
Number of pages3
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume459
StatePublished - Jun 14 1984
EventLaser-Assisted Deposition, Etching, and Doping 1984 - Los Angeles, United States
Duration: Jan 24 1984Jan 26 1984

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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