Laser photochemical vapor deposition

J. G. Eden; K. K. King; E. A.P. Cheng; S. A. Piette; D. B. Geohegan

doi:10.1117/12.937295

Laser photochemical vapor deposition

J. G. Eden, K. K. King, E. A.P. Cheng, S. A. Piette, D. B. Geohegan

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A brief overview of the status of laser photochemical vapor deposition (LPVD) will be given, with emphasis on large area processing. Recent experiments, in which chemical vapor deposition of Ge (or Si) has been “triggered” by ultraviolet (UV) laser photodissociation of GeH₄ (or Si₂H₆), are described.

Original language	English (US)
Pages (from-to)	43-45
Number of pages	3
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	710
DOIs	https://doi.org/10.1117/12.937295
State	Published - Mar 11 1987

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.937295

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abstract = "A brief overview of the status of laser photochemical vapor deposition (LPVD) will be given, with emphasis on large area processing. Recent experiments, in which chemical vapor deposition of Ge (or Si) has been “triggered” by ultraviolet (UV) laser photodissociation of GeH4 (or Si2H6), are described.",

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AU - Cheng, E. A.P.

AU - Piette, S. A.

AU - Geohegan, D. B.

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Laser photochemical vapor deposition

Abstract

ASJC Scopus subject areas

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