Laser photochemical vapor deposition

J. G. Eden, K. K. King, E. A.P. Cheng, S. A. Piette, D. B. Geohegan

Research output: Contribution to journalArticle

Abstract

A brief overview of the status of laser photochemical vapor deposition (LPVD) will be given, with emphasis on large area processing. Recent experiments, in which chemical vapor deposition of Ge (or Si) has been “triggered” by ultraviolet (UV) laser photodissociation of GeH4 (or Si2H6), are described.

Original languageEnglish (US)
Pages (from-to)43-45
Number of pages3
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume710
DOIs
StatePublished - Mar 11 1987

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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