Abstract
A brief overview of the status of laser photochemical vapor deposition (LPVD) will be given, with emphasis on large area processing. Recent experiments, in which chemical vapor deposition of Ge (or Si) has been “triggered” by ultraviolet (UV) laser photodissociation of GeH4 (or Si2H6), are described.
Original language | English (US) |
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Pages (from-to) | 43-45 |
Number of pages | 3 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 710 |
DOIs | |
State | Published - Mar 11 1987 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering