Data are presented demonstrating the laser operation (quasicontinuous, ∼200 K) of an InGaP-GaAs-InGaAs heterojunction bipolar light-emitting transistor with AlGaAs confining layers and an InGaAs recombination quantum well incorporated in the p-type base region. Besides the usual spectral narrowing and mode development occurring at laser threshold, the transistor current gain β=ΔI c/ΔI b, in common emitter operation decreases sharply at laser threshold (6.5 → 2.5, β>1). ° 2004 American Institute of Physics.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)