Laser operation of a heterojunction bipolar light-emitting transistor

G. Walter, N. Holonyak, M. Feng, R. Chan

Research output: Contribution to journalArticlepeer-review


Data are presented demonstrating the laser operation (quasicontinuous, ∼200 K) of an InGaP-GaAs-InGaAs heterojunction bipolar light-emitting transistor with AlGaAs confining layers and an InGaAs recombination quantum well incorporated in the p-type base region. Besides the usual spectral narrowing and mode development occurring at laser threshold, the transistor current gain β=ΔI c/ΔI b, in common emitter operation decreases sharply at laser threshold (6.5 → 2.5, β>1). ° 2004 American Institute of Physics.

Original languageEnglish (US)
Pages (from-to)4768-4770
Number of pages3
JournalApplied Physics Letters
Issue number20
StatePublished - Nov 15 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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