Laser-induced blistering of thin SiO2 on Si

Justin R. Serrano; David G. Cahill

doi:10.1080/10893950590945030

Laser-induced blistering of thin SiO₂ on Si

Research output: Contribution to journal › Article › peer-review

Abstract

Compressive SiO₂ films on Si substrates irradiated with sub-nanosecond laser pulses at fluences above 0.65 J/cm² delaminate from the substrate. The volume of the blister created during the laser processing, determined through volume measurements of AFM and cross-sectional SEM data, is ∼0.1 μm³. Ion bombardment of the film prior to laser processing enhances the delamination, permitting the creation of blisters with volumes on the order of 0.3 μm³ for ion doses from 7.5 × 10¹² to 3.0 × 10¹³ ions/cm².

Original language	English (US)
Pages (from-to)	155-164
Number of pages	10
Journal	Microscale Thermophysical Engineering
Volume	9
Issue number	2
DOIs	https://doi.org/10.1080/10893950590945030
State	Published - Apr 2005

Keywords

Blistering
Delamination
Laser-induced damage
Silicon dioxide
Thin films

ASJC Scopus subject areas

Mechanical Engineering
Materials Science (miscellaneous)
Physics and Astronomy (miscellaneous)

Online availability

10.1080/10893950590945030

Library availability

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Cite this

@article{116f19324c4d4111842ae43343d81b07,

title = "Laser-induced blistering of thin SiO2 on Si",

abstract = "Compressive SiO2 films on Si substrates irradiated with sub-nanosecond laser pulses at fluences above 0.65 J/cm2 delaminate from the substrate. The volume of the blister created during the laser processing, determined through volume measurements of AFM and cross-sectional SEM data, is ∼0.1 μm3. Ion bombardment of the film prior to laser processing enhances the delamination, permitting the creation of blisters with volumes on the order of 0.3 μm3 for ion doses from 7.5 × 1012 to 3.0 × 1013 ions/cm2.",

keywords = "Blistering, Delamination, Laser-induced damage, Silicon dioxide, Thin films",

author = "Serrano, {Justin R.} and Cahill, {David G.}",

note = "Funding Information: Received 7 May 2004; accepted 9 August 2004. This work was supported by the U.S. National Science Foundation Grant No. DMR-9986160 and by the U.S. Department of Energy Grant No. DEFG02-91-ER45439 through the University of Illinois Materials Research Laboratory. Sample characterization by AFM and SEM was carried out in the Center for Microanalysis of Materials at the University of Illinois. Address correspondence to Justin R. Serrano, P.O. Box 5800, MS 1310, Albuquerque, NM 87185-1310. E-mail: [email protected].",

year = "2005",

month = apr,

doi = "10.1080/10893950590945030",

language = "English (US)",

volume = "9",

pages = "155--164",

journal = "Microscale Thermophysical Engineering",

issn = "1089-3954",

publisher = "Taylor and Francis Ltd.",

number = "2",

}

TY - JOUR

T1 - Laser-induced blistering of thin SiO2 on Si

AU - Serrano, Justin R.

AU - Cahill, David G.

N1 - Funding Information: Received 7 May 2004; accepted 9 August 2004. This work was supported by the U.S. National Science Foundation Grant No. DMR-9986160 and by the U.S. Department of Energy Grant No. DEFG02-91-ER45439 through the University of Illinois Materials Research Laboratory. Sample characterization by AFM and SEM was carried out in the Center for Microanalysis of Materials at the University of Illinois. Address correspondence to Justin R. Serrano, P.O. Box 5800, MS 1310, Albuquerque, NM 87185-1310. E-mail: [email protected].

PY - 2005/4

Y1 - 2005/4

N2 - Compressive SiO2 films on Si substrates irradiated with sub-nanosecond laser pulses at fluences above 0.65 J/cm2 delaminate from the substrate. The volume of the blister created during the laser processing, determined through volume measurements of AFM and cross-sectional SEM data, is ∼0.1 μm3. Ion bombardment of the film prior to laser processing enhances the delamination, permitting the creation of blisters with volumes on the order of 0.3 μm3 for ion doses from 7.5 × 1012 to 3.0 × 1013 ions/cm2.

AB - Compressive SiO2 films on Si substrates irradiated with sub-nanosecond laser pulses at fluences above 0.65 J/cm2 delaminate from the substrate. The volume of the blister created during the laser processing, determined through volume measurements of AFM and cross-sectional SEM data, is ∼0.1 μm3. Ion bombardment of the film prior to laser processing enhances the delamination, permitting the creation of blisters with volumes on the order of 0.3 μm3 for ion doses from 7.5 × 1012 to 3.0 × 1013 ions/cm2.

KW - Blistering

KW - Delamination

KW - Laser-induced damage

KW - Silicon dioxide

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=20444403791&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20444403791&partnerID=8YFLogxK

U2 - 10.1080/10893950590945030

DO - 10.1080/10893950590945030

M3 - Article

AN - SCOPUS:20444403791

SN - 1089-3954

VL - 9

SP - 155

EP - 164

JO - Microscale Thermophysical Engineering

JF - Microscale Thermophysical Engineering

IS - 2

ER -