Compressive SiO2 films on Si substrates irradiated with sub-nanosecond laser pulses at fluences above 0.65 J/cm2 delaminate from the substrate. The volume of the blister created during the laser processing, determined through volume measurements of AFM and cross-sectional SEM data, is ∼0.1 μm3. Ion bombardment of the film prior to laser processing enhances the delamination, permitting the creation of blisters with volumes on the order of 0.3 μm3 for ion doses from 7.5 × 1012 to 3.0 × 1013 ions/cm2.
- Laser-induced damage
- Silicon dioxide
- Thin films
ASJC Scopus subject areas
- Mechanical Engineering
- Materials Science (miscellaneous)
- Physics and Astronomy (miscellaneous)