Laser-induced blistering of thin SiO2 on Si

Justin R. Serrano, David G. Cahill

Research output: Contribution to journalArticlepeer-review

Abstract

Compressive SiO2 films on Si substrates irradiated with sub-nanosecond laser pulses at fluences above 0.65 J/cm2 delaminate from the substrate. The volume of the blister created during the laser processing, determined through volume measurements of AFM and cross-sectional SEM data, is ∼0.1 μm3. Ion bombardment of the film prior to laser processing enhances the delamination, permitting the creation of blisters with volumes on the order of 0.3 μm3 for ion doses from 7.5 × 1012 to 3.0 × 1013 ions/cm2.

Original languageEnglish (US)
Pages (from-to)155-164
Number of pages10
JournalMicroscale Thermophysical Engineering
Volume9
Issue number2
DOIs
StatePublished - Apr 1 2005

Keywords

  • Blistering
  • Delamination
  • Laser-induced damage
  • Silicon dioxide
  • Thin films

ASJC Scopus subject areas

  • Mechanical Engineering
  • Materials Science (miscellaneous)
  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Laser-induced blistering of thin SiO<sub>2</sub> on Si'. Together they form a unique fingerprint.

Cite this