TY - GEN
T1 - Large-Signal Modeling of GaN HEMTs using Fermi Kinetics and Commercial Hydrodynamics Transport
AU - White, E.
AU - Tunga, A.
AU - Miller, N. C.
AU - Grupen, M.
AU - Albrecht, J. D.
AU - Rakheja, S.
N1 - Funding Information:
This work was supported by AFOSR Grant No. LRIR 21RYCOR073, Semiconductor Research Corporation, and NSF Award No. ECCS-2237663. The Illinois Scholars Undergraduate Research (ISUR) Program is acknowledged for their contribution. [1] A. Tunga et al., Journal of Applied Physics, vol. 132, no. 22, [2] J. R. Senning, Computing and estimating the rate of conver- p. 225702, 2022. gence (Gordon College, Wenham, 2007).
Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - This work compares the current-voltage characteristics and convergence of two technology computer aided design (TCAD) solvers, a commercial hydrodynamic transport (CHT) solver, Sentaurus by Synopsys (Version R-2020.09), and the Fermi kinetics transport (FKT) solver developed at the Air Force Research Laboratory. These solvers are used to simulate and determine the convergence properties of the large-signal response of a conventional gallium nitride (GaN) high-electron mobility transistor (HEMT) at 1 GHz using drift-diffusion transport with constant electron mobility. We show that the large signal response of the HEMT is virtually the same in CHT and FKT with minor differences in their rate of convergence. This contrasts previous work in static simulations [1] where FKT had better convergence, showing that transient simulations are more computationally robust than static ones.
AB - This work compares the current-voltage characteristics and convergence of two technology computer aided design (TCAD) solvers, a commercial hydrodynamic transport (CHT) solver, Sentaurus by Synopsys (Version R-2020.09), and the Fermi kinetics transport (FKT) solver developed at the Air Force Research Laboratory. These solvers are used to simulate and determine the convergence properties of the large-signal response of a conventional gallium nitride (GaN) high-electron mobility transistor (HEMT) at 1 GHz using drift-diffusion transport with constant electron mobility. We show that the large signal response of the HEMT is virtually the same in CHT and FKT with minor differences in their rate of convergence. This contrasts previous work in static simulations [1] where FKT had better convergence, showing that transient simulations are more computationally robust than static ones.
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U2 - 10.1109/DRC58590.2023.10186900
DO - 10.1109/DRC58590.2023.10186900
M3 - Conference contribution
AN - SCOPUS:85167872691
T3 - Device Research Conference - Conference Digest, DRC
BT - 2023 Device Research Conference, DRC 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 Device Research Conference, DRC 2023
Y2 - 25 June 2023 through 28 June 2023
ER -