Large scale arrays of microdischarge devices fabricated in Si

Sung Jin Park, Kuo Feng Chen, J. Gary Eden

Research output: Contribution to journalConference articlepeer-review


The design and performance of AC type silicon microdischarge devices and arrays were investigated. The microdischarge devices of cavity widths in the 10-100μm range and which incorporated a metal/dielectrics/Si structure were fabricated by MEMS and VLSI fabrication processes. The devices operated at voltages as low as 500 V p- in 900 Torr of Ne at 15 kHz AC excitation. Excellent stability and emission uniformity were observed at pressures higher than 700 Torr of Ne, for atmospheric pressure of the array. The results show that the array exhibited a linear increase in the plasma differential resistance, and the voltage-current curve saturated beyond a certain value of power loading.

Original languageEnglish (US)
Article numberTuL4
Pages (from-to)256-257
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
StatePublished - 2004
Event2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 - Rio Grande, Puerto Rico
Duration: Nov 7 2004Nov 11 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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