Large-periphery AlGaN/GaN high electron mobility transistors for high-power operation

Liang Pang, Zhi Zheng, Hui Chan Seo, Patrick Chapman, Philip Krein, Jung Hee Lee, Ki Won Kim, Kyekyoon Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on AlGaN/GaN high electron mobility transistors (HEMTs) for high-power operation achieved by selective-area growth (SAG) technique based on plasma-assisted molecular beam epitaxy (PAMBE). Significant improvements in current density and on-state resistance were observed when SAG was employed. Maximum current of 1.75A and on-state resistance of 4.76mΩ cm2 were demonstrated for a large-periphery HEMT with total gate width of 5.2mm. Low Schottky gate leakage current was also realized by the suppression effect of SAG and the use of Si3N4/SiO2 gate insulators, leading to a high gate breakdown voltage of over 200V at a short gate-to-drain distance of 6μm.

Original languageEnglish (US)
Title of host publication2010 18th Biennial University/Government/Industry Micro-Nano Symposium, UGIM 2010 - Proceedings
DOIs
StatePublished - 2010
Event18th Biennial University/Government/Industry Micro-Nano Symposium, UGIM 2010 - West Lafayette, IN, United States
Duration: Jun 28 2010Jul 1 2010

Publication series

NameBiennial University/Government/Industry Microelectronics Symposium - Proceedings
ISSN (Print)0749-6877

Other

Other18th Biennial University/Government/Industry Micro-Nano Symposium, UGIM 2010
CountryUnited States
CityWest Lafayette, IN
Period6/28/107/1/10

Keywords

  • AlGaN/GaN
  • Current density
  • HEMT
  • On-state resistance
  • PAMBE
  • Power switch
  • SAG

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Pang, L., Zheng, Z., Seo, H. C., Chapman, P., Krein, P., Lee, J. H., Kim, K. W., & Kim, K. (2010). Large-periphery AlGaN/GaN high electron mobility transistors for high-power operation. In 2010 18th Biennial University/Government/Industry Micro-Nano Symposium, UGIM 2010 - Proceedings [5508902] (Biennial University/Government/Industry Microelectronics Symposium - Proceedings). https://doi.org/10.1109/UGIM.2010.5508902