TY - JOUR
T1 - Large-chern-number quantum anomalous hall effect in thin-film topological crystalline insulators
AU - Fang, Chen
AU - Gilbert, Matthew J.
AU - Bernevig, B. Andrei
PY - 2014/1/27
Y1 - 2014/1/27
N2 - We theoretically predict that thin-film topological crystalline insulators can host various quantum anomalous Hall phases when doped by ferromagnetically ordered dopants. Any Chern number between ±4 can, in principle, be reached as a result of the interplay between (a) the induced Zeeman field, depending on the magnetic doping concentration, (b) the structural distortion, either intrinsic or induced by a piezoelectric material through the proximity effect, and (c) the thickness of the thin film. We propose a heterostructure to realize quantum anomalous Hall phases with Chern numbers that can be tuned by electric fields.
AB - We theoretically predict that thin-film topological crystalline insulators can host various quantum anomalous Hall phases when doped by ferromagnetically ordered dopants. Any Chern number between ±4 can, in principle, be reached as a result of the interplay between (a) the induced Zeeman field, depending on the magnetic doping concentration, (b) the structural distortion, either intrinsic or induced by a piezoelectric material through the proximity effect, and (c) the thickness of the thin film. We propose a heterostructure to realize quantum anomalous Hall phases with Chern numbers that can be tuned by electric fields.
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U2 - 10.1103/PhysRevLett.112.046801
DO - 10.1103/PhysRevLett.112.046801
M3 - Article
AN - SCOPUS:84894442043
SN - 0031-9007
VL - 112
JO - Physical review letters
JF - Physical review letters
IS - 4
M1 - 046801
ER -