Large area MoS2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS2/p-InGaN diode

Kyooho Jung; Che Yu Liu; J. D. Kim; Wonsik Choi; Weidong Zhou; Hao Chung Kuo; Xiuling Li

doi:10.1109/IPCon.2016.7831271

Large area MoS₂ van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS₂/p-InGaN diode

Kyooho Jung, Che Yu Liu, J. D. Kim, Wonsik Choi, Weidong Zhou, Hao Chung Kuo, Xiuling Li

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Epitaxial growth of aligned MoS₂ triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS₂/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.

Original language	English (US)
Title of host publication	2016 IEEE Photonics Conference, IPC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	657-658
Number of pages	2
ISBN (Electronic)	9781509019069
DOIs	https://doi.org/10.1109/IPCon.2016.7831271
State	Published - Jan 23 2017
Event	29th IEEE Photonics Conference, IPC 2016 - Waikoloa, United States Duration: Oct 2 2016 → Oct 6 2016

Publication series

Name	2016 IEEE Photonics Conference, IPC 2016

Other

Other	29th IEEE Photonics Conference, IPC 2016
Country/Territory	United States
City	Waikoloa
Period	10/2/16 → 10/6/16

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

Online availability

10.1109/IPCon.2016.7831271

Library availability

Discover UIUC Full Text

Cite this

Jung, K., Liu, C. Y., Kim, J. D., Choi, W., Zhou, W., Kuo, H. C., & Li, X. (2017). Large area MoS₂ van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS₂/p-InGaN diode. In 2016 IEEE Photonics Conference, IPC 2016 (pp. 657-658). Article 7831271 (2016 IEEE Photonics Conference, IPC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2016.7831271

Large area MoS₂ van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS₂/p-InGaN diode. / Jung, Kyooho; Liu, Che Yu; Kim, J. D. et al.
2016 IEEE Photonics Conference, IPC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 657-658 7831271 (2016 IEEE Photonics Conference, IPC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jung, K, Liu, CY, Kim, JD, Choi, W, Zhou, W, Kuo, HC & Li, X 2017, Large area MoS₂ van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS₂/p-InGaN diode. in 2016 IEEE Photonics Conference, IPC 2016., 7831271, 2016 IEEE Photonics Conference, IPC 2016, Institute of Electrical and Electronics Engineers Inc., pp. 657-658, 29th IEEE Photonics Conference, IPC 2016, Waikoloa, United States, 10/2/16. https://doi.org/10.1109/IPCon.2016.7831271

@inproceedings{5c8d4508411e4956bc526f6a8d78f55c,

title = "Large area MoS2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS2/p-InGaN diode",

abstract = "Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.",

author = "Kyooho Jung and Liu, {Che Yu} and Kim, {J. D.} and Wonsik Choi and Weidong Zhou and Kuo, {Hao Chung} and Xiuling Li",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 29th IEEE Photonics Conference, IPC 2016 ; Conference date: 02-10-2016 Through 06-10-2016",

year = "2017",

month = jan,

day = "23",

doi = "10.1109/IPCon.2016.7831271",

language = "English (US)",

series = "2016 IEEE Photonics Conference, IPC 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "657--658",

booktitle = "2016 IEEE Photonics Conference, IPC 2016",

address = "United States",

}

TY - GEN

T1 - Large area MoS2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS2/p-InGaN diode

AU - Jung, Kyooho

AU - Liu, Che Yu

AU - Kim, J. D.

AU - Choi, Wonsik

AU - Zhou, Weidong

AU - Kuo, Hao Chung

AU - Li, Xiuling

PY - 2017/1/23

Y1 - 2017/1/23

N2 - Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.

AB - Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.

UR - http://www.scopus.com/inward/record.url?scp=85014180437&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85014180437&partnerID=8YFLogxK

U2 - 10.1109/IPCon.2016.7831271

DO - 10.1109/IPCon.2016.7831271

M3 - Conference contribution

AN - SCOPUS:85014180437

T3 - 2016 IEEE Photonics Conference, IPC 2016

SP - 657

EP - 658

BT - 2016 IEEE Photonics Conference, IPC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 29th IEEE Photonics Conference, IPC 2016

Y2 - 2 October 2016 through 6 October 2016

ER -