Large area MoS2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS2/p-InGaN diode

Kyooho Jung, Che Yu Liu, J. D. Kim, Wonsik Choi, Weidong Zhou, Hao Chung Kuo, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.

Original languageEnglish (US)
Title of host publication2016 IEEE Photonics Conference, IPC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages657-658
Number of pages2
ISBN (Electronic)9781509019069
DOIs
StatePublished - Jan 23 2017
Event29th IEEE Photonics Conference, IPC 2016 - Waikoloa, United States
Duration: Oct 2 2016Oct 6 2016

Publication series

Name2016 IEEE Photonics Conference, IPC 2016

Other

Other29th IEEE Photonics Conference, IPC 2016
CountryUnited States
CityWaikoloa
Period10/2/1610/6/16

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Jung, K., Liu, C. Y., Kim, J. D., Choi, W., Zhou, W., Kuo, H. C., & Li, X. (2017). Large area MoS2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS2/p-InGaN diode. In 2016 IEEE Photonics Conference, IPC 2016 (pp. 657-658). [7831271] (2016 IEEE Photonics Conference, IPC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2016.7831271