Large area MoS 2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS 2 /p-InGaN diode

Kyooho Jung, Che Yu Liu, J. D. Kim, Wonsik Choi, Weidong Zhou, Hao Chung Kuo, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Epitaxial growth of aligned MoS 2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS 2 /p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.

Original languageEnglish (US)
Title of host publication2016 IEEE Photonics Conference, IPC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages657-658
Number of pages2
ISBN (Electronic)9781509019069
DOIs
StatePublished - Jan 23 2017
Event29th IEEE Photonics Conference, IPC 2016 - Waikoloa, United States
Duration: Oct 2 2016Oct 6 2016

Publication series

Name2016 IEEE Photonics Conference, IPC 2016

Other

Other29th IEEE Photonics Conference, IPC 2016
CountryUnited States
CityWaikoloa
Period10/2/1610/6/16

Fingerprint

Epitaxial growth
triangles
epitaxy
Diodes
diodes
Substrates

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Jung, K., Liu, C. Y., Kim, J. D., Choi, W., Zhou, W., Kuo, H. C., & Li, X. (2017). Large area MoS 2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS 2 /p-InGaN diode In 2016 IEEE Photonics Conference, IPC 2016 (pp. 657-658). [7831271] (2016 IEEE Photonics Conference, IPC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2016.7831271

Large area MoS 2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS 2 /p-InGaN diode . / Jung, Kyooho; Liu, Che Yu; Kim, J. D.; Choi, Wonsik; Zhou, Weidong; Kuo, Hao Chung; Li, Xiuling.

2016 IEEE Photonics Conference, IPC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 657-658 7831271 (2016 IEEE Photonics Conference, IPC 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jung, K, Liu, CY, Kim, JD, Choi, W, Zhou, W, Kuo, HC & Li, X 2017, Large area MoS 2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS 2 /p-InGaN diode in 2016 IEEE Photonics Conference, IPC 2016., 7831271, 2016 IEEE Photonics Conference, IPC 2016, Institute of Electrical and Electronics Engineers Inc., pp. 657-658, 29th IEEE Photonics Conference, IPC 2016, Waikoloa, United States, 10/2/16. https://doi.org/10.1109/IPCon.2016.7831271
Jung K, Liu CY, Kim JD, Choi W, Zhou W, Kuo HC et al. Large area MoS 2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS 2 /p-InGaN diode In 2016 IEEE Photonics Conference, IPC 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 657-658. 7831271. (2016 IEEE Photonics Conference, IPC 2016). https://doi.org/10.1109/IPCon.2016.7831271
Jung, Kyooho ; Liu, Che Yu ; Kim, J. D. ; Choi, Wonsik ; Zhou, Weidong ; Kuo, Hao Chung ; Li, Xiuling. / Large area MoS 2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS 2 /p-InGaN diode 2016 IEEE Photonics Conference, IPC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 657-658 (2016 IEEE Photonics Conference, IPC 2016).
@inproceedings{5c8d4508411e4956bc526f6a8d78f55c,
title = "Large area MoS 2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS 2 /p-InGaN diode",
abstract = "Epitaxial growth of aligned MoS 2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS 2 /p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.",
author = "Kyooho Jung and Liu, {Che Yu} and Kim, {J. D.} and Wonsik Choi and Weidong Zhou and Kuo, {Hao Chung} and Xiuling Li",
year = "2017",
month = "1",
day = "23",
doi = "10.1109/IPCon.2016.7831271",
language = "English (US)",
series = "2016 IEEE Photonics Conference, IPC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "657--658",
booktitle = "2016 IEEE Photonics Conference, IPC 2016",
address = "United States",

}

TY - GEN

T1 - Large area MoS 2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS 2 /p-InGaN diode

AU - Jung, Kyooho

AU - Liu, Che Yu

AU - Kim, J. D.

AU - Choi, Wonsik

AU - Zhou, Weidong

AU - Kuo, Hao Chung

AU - Li, Xiuling

PY - 2017/1/23

Y1 - 2017/1/23

N2 - Epitaxial growth of aligned MoS 2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS 2 /p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.

AB - Epitaxial growth of aligned MoS 2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS 2 /p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.

UR - http://www.scopus.com/inward/record.url?scp=85014180437&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85014180437&partnerID=8YFLogxK

U2 - 10.1109/IPCon.2016.7831271

DO - 10.1109/IPCon.2016.7831271

M3 - Conference contribution

AN - SCOPUS:85014180437

T3 - 2016 IEEE Photonics Conference, IPC 2016

SP - 657

EP - 658

BT - 2016 IEEE Photonics Conference, IPC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -