Kinetics of thin-film reactions of Cu/a-Ge bilayers

Z. Wang, G. Ramanath, L. H. Allen, A. Rockett, J. P. Doyle, B. G. Svensson

Research output: Contribution to journalArticlepeer-review


The kinetics of the Cu3Ge phase formation during reactions between 600 nm polycrystalline Cu (poly-Cu) and 600 nm amorphous Ge (a-Ge) layers on Si (100) substrates have been studied as a function of annealing conditions. Monoclinic Cu3Ge nucleated rapidly, resulting in smooth Cu3Ge layers. The room-temperature resistivity of the Cu3Ge was ∼8 μcm (∼4.5 times that of pure Cu). The real-time resistance versus temperature [R(T)] characteristics were nearly identical for heating rates of 0.1-5 °C/min. Modeling of the R(T) data indicates that the reaction was predominantly diffusion controlled with a rate of (4×10-3 cm2/s) exp [-0.85±0.01 eV/kT] where k = 8.617 × 10-5 eV/K. Secondary ion mass spectrometry profiles and R(T) data for the films annealed to various temperatures indicate that the Cu3Ge/Ge interface is stable for T<300°C.

Original languageEnglish (US)
Pages (from-to)3281-3286
Number of pages6
JournalJournal of Applied Physics
Issue number7
StatePublished - Oct 1 1997

ASJC Scopus subject areas

  • General Physics and Astronomy


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