Abstract
The kinetics of the Cu3Ge phase formation during reactions between 600 nm polycrystalline Cu (poly-Cu) and 600 nm amorphous Ge (a-Ge) layers on Si (100) substrates have been studied as a function of annealing conditions. Monoclinic Cu3Ge nucleated rapidly, resulting in smooth Cu3Ge layers. The room-temperature resistivity of the Cu3Ge was ∼8 μcm (∼4.5 times that of pure Cu). The real-time resistance versus temperature [R(T)] characteristics were nearly identical for heating rates of 0.1-5 °C/min. Modeling of the R(T) data indicates that the reaction was predominantly diffusion controlled with a rate of (4×10-3 cm2/s) exp [-0.85±0.01 eV/kT] where k = 8.617 × 10-5 eV/K. Secondary ion mass spectrometry profiles and R(T) data for the films annealed to various temperatures indicate that the Cu3Ge/Ge interface is stable for T<300°C.
Original language | English (US) |
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Pages (from-to) | 3281-3286 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 82 |
Issue number | 7 |
DOIs | |
State | Published - Oct 1 1997 |
ASJC Scopus subject areas
- General Physics and Astronomy