Kinetics of salicide contact formation for thin-film soi transistors

M. A. Mendicino; E. G. Seebauer

doi:10.1149/1.2044125

Kinetics of salicide contact formation for thin-film soi transistors

M. A. Mendicino, E. G. Seebauer

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Problems of voiding and poor contact resistance have plagued recent attempts to apply salicide technology to silicon-on-insulator (S01) transistors. A physical picture is developed to explain why these problems occur. The picture rests on the known kinetics of silicide formation and the resistance to silicon diffusion imposed by device geometry.

Original language	English (US)
Pages (from-to)	L28-L30
Journal	Journal of the Electrochemical Society
Volume	142
Issue number	2
DOIs	https://doi.org/10.1149/1.2044125
State	Published - Feb 1995

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.2044125

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title = "Kinetics of salicide contact formation for thin-film soi transistors",

abstract = "Problems of voiding and poor contact resistance have plagued recent attempts to apply salicide technology to silicon-on-insulator (S01) transistors. A physical picture is developed to explain why these problems occur. The picture rests on the known kinetics of silicide formation and the resistance to silicon diffusion imposed by device geometry.",

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AB - Problems of voiding and poor contact resistance have plagued recent attempts to apply salicide technology to silicon-on-insulator (S01) transistors. A physical picture is developed to explain why these problems occur. The picture rests on the known kinetics of silicide formation and the resistance to silicon diffusion imposed by device geometry.

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Kinetics of salicide contact formation for thin-film soi transistors

Abstract

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