Kinetics of Ni/a-Ge bilayer reactions

Keyphrases

• X Ray Diffraction 100%
• Sheet Resistance 100%
• NiGe 100%
• C. X-ray Photoelectron Spectroscopy 100%
• Temperature Range 50%
• Si Wafer 50%
• Annealing 50%
• X-ray Photoelectron Spectroscopy 50%
• Activation Energy 50%
• Room Temperature 50%
• Monoclinic 50%
• Nucleate 50%
• Isothermal Annealing 50%
• Four-point 50%
• Thermally Activated Processes 50%
• Agglomeration 50%
• Reaction Pathway 50%
• Orthorhombic 50%
• Temperature Ramp 50%
• Thin Film Reactions 50%
• Time Resistance 50%
• Annealing Conditions 50%
• Resistance Measurement 50%
• Cross-sectional Transmission Electron Microscopy 50%
• Bilayer Structure 50%
• Resistance Characteristics 50%
• Ramp Rate 50%
• Local Maxima 50%

Engineering

• Ray Photoelectron Spectroscopy 100%
• Ray Diffraction 66%
• Sheet Resistance 66%
• Thin Films 33%
• Si Wafer 33%
• Temperature Range 33%
• Transmissions 33%
• Room Temperature 33%
• Activation Energy 33%
• Monoclinic 33%
• Sample Surface 33%
• Oxidized Si 33%
• Resistance Characteristic 33%
• Isothermal Annealing 33%
• Ramp Rate 33%

Material Science

• Annealing 100%
• X-Ray Photoelectron Spectroscopy 100%
• X-Ray Diffraction 66%
• Thin Films 33%
• Activation Energy 33%
• Transmission Electron Microscopy 33%