Abstract
The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.
Original language | English (US) |
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Article number | 021604 |
Journal | Applied Physics Letters |
Volume | 105 |
Issue number | 2 |
DOIs | |
State | Published - Jul 14 2014 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)