Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

Prashun Gorai, Edmund G. Seebauer

Research output: Contribution to journalArticle

Abstract

The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

Original languageEnglish (US)
Article number021604
JournalApplied Physics Letters
Volume105
Issue number2
DOIs
StatePublished - Jan 1 2014

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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